Journal of Semiconductors

2019年JOS入选“中国科技期刊卓越行动计划”

2020年11月JOS被EI数据库收录

Authors
About the Journal
Editorial Board

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

|

Issue Browser

Volume 15, Issue 6, Jun 1994

Table of Content

Select articles

CONTENTS

氢等离子体对（Pt及其硅化物）／Si界面的杂质／缺陷态和势垒的影响

丁孙安，许振嘉

Chin. J. Semicond. 1994, 15(6): 367-372

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 367.

丁孙安，许振嘉. 氢等离子体对（Pt及其硅化物）／Si界面的杂质／缺陷态和势垒的影响[J]. Chin. J. Semicond., 1994, 15(6): 367..Export: BibTex EndNote

丁孙安，许振嘉. 氢等离子体对（Pt及其硅化物）／Si界面的杂质／缺陷态和势垒的影响[J]. Chin. J. Semicond., 1994, 15(6): 367...

Si／Si_1－xGe_x应变层超晶格折叠声子能隙的精细测量

张鹏翔, D. J. Lockwood, J. M. Baribeau, H. J. Labbe

Chin. J. Semicond. 1994, 15(6): 373-382

Abstract PDF Cited by ()

. [J]. Chin. Journal of Semiconductors, 1994, 15(6): 373.

张鹏翔, D.J.Lockwood, J.M.Baribeau, H.J.Labbe. Si／Si_（1－x）Ge_x应变层超晶格折叠声子能隙的精细测量[J]. Chin. J. Semicond., 1994, 15(6): 373..Export: BibTex EndNote

张鹏翔, D.J.Lockwood, J.M.Baribeau, H.J.Labbe. Si／Si_（1－x）Ge_x应变层超晶格折叠声子能隙的精细测量[J]. Chin. J. Semicond., 1994, 15(6): 373...

进一步提高氢离子敏场效应晶体管稳定性的研究

陈克铭，李国花，陈朗星，朱燕

Chin. J. Semicond. 1994, 15(6): 383-387

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 383.

陈克铭，李国花，陈朗星，朱燕. 进一步提高氢离子敏场效应晶体管稳定性的研究[J]. Chin. J. Semicond., 1994, 15(6): 383..Export: BibTex EndNote

陈克铭，李国花，陈朗星，朱燕. 进一步提高氢离子敏场效应晶体管稳定性的研究[J]. Chin. J. Semicond., 1994, 15(6): 383...

优质高阻异型厚层硅外延IGBT材料n~－／n~＋／p~＋

杨谟华，黎展荣

Chin. J. Semicond. 1994, 15(6): 388-392

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 388.

杨谟华，黎展荣. 优质高阻异型厚层硅外延IGBT材料n~－／n~＋／p~＋[J]. Chin. J. Semicond., 1994, 15(6): 388..Export: BibTex EndNote

杨谟华，黎展荣. 优质高阻异型厚层硅外延IGBT材料n~－／n~＋／p~＋[J]. Chin. J. Semicond., 1994, 15(6): 388...

Ⅲ族锢源对LP－MOVPE方法生长In_1－xGa_xAs材料的影响

祝进田，胡礼中，刘式墉

Chin. J. Semicond. 1994, 15(6): 393-396

Abstract PDF Cited by ()

null. [J]. Chin. Journal of Semiconductors, 1994, 15(6): 393.

祝进田，胡礼中，刘式墉. Ⅲ族锢源对LP－MOVPE方法生长In_（1－x）Ga_xAs材料的影响[J]. Chin. J. Semicond., 1994, 15(6): 393..Export: BibTex EndNote

祝进田，胡礼中，刘式墉. Ⅲ族锢源对LP－MOVPE方法生长In_（1－x）Ga_xAs材料的影响[J]. Chin. J. Semicond., 1994, 15(6): 393...

GaAs表面等离激元偏振子的激励以及它的偏光依赖性

吴鼎祥

Chin. J. Semicond. 1994, 15(6): 397-401

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 397.

吴鼎祥. GaAs表面等离激元偏振子的激励以及它的偏光依赖性[J]. Chin. J. Semicond., 1994, 15(6): 397..Export: BibTex EndNote

吴鼎祥. GaAs表面等离激元偏振子的激励以及它的偏光依赖性[J]. Chin. J. Semicond., 1994, 15(6): 397...

微氮硅单晶热处理性质研究

杨德仁，姚鸿年，阙端麟

Chin. J. Semicond. 1994, 15(6): 402-408

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 402.

杨德仁，姚鸿年，阙端麟. 微氮硅单晶热处理性质研究[J]. Chin. J. Semicond., 1994, 15(6): 402..Export: BibTex EndNote

杨德仁，姚鸿年，阙端麟. 微氮硅单晶热处理性质研究[J]. Chin. J. Semicond., 1994, 15(6): 402...

硅锗分子束外延层表面形貌的扫描隧道显微镜研究

周铁城，蔡群，朱昂如，董树忠，盛篪，俞鸣人，张翔龙，王迅

Chin. J. Semicond. 1994, 15(6): 409-415

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 409.

周铁城，蔡群，朱昂如，董树忠，盛篪，俞鸣人，张翔龙，王迅. 硅锗分子束外延层表面形貌的扫描隧道显微镜研究[J]. Chin. J. Semicond., 1994, 15(6): 409..Export: BibTex EndNote

周铁城，蔡群，朱昂如，董树忠，盛篪，俞鸣人，张翔龙，王迅. 硅锗分子束外延层表面形貌的扫描隧道显微镜研究[J]. Chin. J. Semicond., 1994, 15(6): 409...

用非相干光时间延迟四波混频测量载流子复合时间

张希清，赵家龙，泰伟平，黄世华

Chin. J. Semicond. 1994, 15(6): 416-421

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 416.

张希清，赵家龙，泰伟平，黄世华. 用非相干光时间延迟四波混频测量载流子复合时间[J]. Chin. J. Semicond., 1994, 15(6): 416..Export: BibTex EndNote

张希清，赵家龙，泰伟平，黄世华. 用非相干光时间延迟四波混频测量载流子复合时间[J]. Chin. J. Semicond., 1994, 15(6): 416...

微氮硅单晶中氧沉滨

杨德仁，姚鸿年，阙端麟

Chin. J. Semicond. 1994, 15(6): 422-428

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 422.

杨德仁，姚鸿年，阙端麟. 微氮硅单晶中氧沉滨[J]. Chin. J. Semicond., 1994, 15(6): 422..Export: BibTex EndNote

杨德仁，姚鸿年，阙端麟. 微氮硅单晶中氧沉滨[J]. Chin. J. Semicond., 1994, 15(6): 422...

硼掺杂多晶硅薄膜电阻率的温度特性

刘晓为，张国威，刘振茂，理峰

Chin. J. Semicond. 1994, 15(6): 429-434

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(6): 429.

刘晓为，张国威，刘振茂，理峰. 硼掺杂多晶硅薄膜电阻率的温度特性[J]. Chin. J. Semicond., 1994, 15(6): 429..Export: BibTex EndNote

刘晓为，张国威，刘振茂，理峰. 硼掺杂多晶硅薄膜电阻率的温度特性[J]. Chin. J. Semicond., 1994, 15(6): 429...

Si^＋注入InP材料的欧姆接触特性研究

沈鸿烈，徐宏来，周祖尧，林梓鑫，邹世昌

Chin. J. Semicond. 1994, 15(6): 435-438

Abstract PDF Cited by ()

null. [J]. Chin. Journal of Semiconductors, 1994, 15(6): 435.

沈鸿烈，徐宏来，周祖尧，林梓鑫，邹世昌. Si~＋注入InP材料的欧姆接触特性研究[J]. Chin. J. Semicond., 1994, 15(6): 435..Export: BibTex EndNote

沈鸿烈，徐宏来，周祖尧，林梓鑫，邹世昌. Si~＋注入InP材料的欧姆接触特性研究[J]. Chin. J. Semicond., 1994, 15(6): 435...

Search

Advanced Search >>

Issues

2024

Volume 45 lssue 9, Sep 2024

Volume 45 lssue 8, Aug 2024

Volume 45 lssue 7, Jul 2024

Volume 45 lssue 6, Jun 2024

Volume 45 lssue 5, May 2024

Volume 45 lssue 4, Apr 2024

Volume 45 lssue 3, Mar 2024

Volume 45 lssue 2, Feb 2024

Volume 45 lssue 1, Jan 2024
2023

Volume 44 lssue 12, Dec 2023

Volume 44 lssue 11, Nov 2023

Volume 44 lssue 10, Oct 2023

Volume 44 lssue 9, Sep 2023

Volume 44 lssue 8, Aug 2023

Volume 44 lssue 7, Jul 2023

Volume 44 lssue 6, Jun 2023

Volume 44 lssue 5, May 2023

Volume 44 lssue 4, Apr 2023

Volume 44 lssue 3, Mar 2023

Volume 44 lssue 2, Feb 2023

Volume 44 lssue 1, Jan 2023
2022

Volume 43 lssue 12, Dec 2022

Volume 43 lssue 11, Nov 2022

Volume 43 lssue 10, Oct 2022

Volume 43 lssue 9, Sep 2022

Volume 43 lssue 8, Aug 2022

Volume 43 lssue 7, Jul 2022

Volume 43 lssue 6, Jun 2022

Volume 43 lssue 5, May 2022

Volume 43 lssue 4, Apr 2022

Volume 43 lssue 3, Mar 2022

Volume 43 lssue 2, Feb 2022

Volume 43 lssue 1, Jan 2022
2021

Volume 42 lssue 12, Dec 2021

Volume 42 lssue 11, Nov 2021

Volume 42 lssue 10, Oct 2021

Volume 42 lssue 9, Sep 2021

Volume 42 lssue 8, Aug 2021

Volume 42 lssue 7, Jul 2021

Volume 42 lssue 6, Jun 2021

Volume 42 lssue 5, May 2021

Volume 42 lssue 4, Apr 2021

Volume 42 lssue 3, Mar 2021

Volume 42 lssue 2, Feb 2021

Volume 42 lssue 1, Jan 2021
2020

Volume 41 lssue 12, Dec 2020

Volume 41 lssue 11, Nov 2020

Volume 41 lssue 10, Oct 2020

Volume 41 lssue 9, Sep 2020

Volume 41 lssue 8, Aug 2020

Volume 41 lssue 7, Jul 2020

Volume 41 lssue 6, Jun 2020

Volume 41 lssue 5, May 2020

Volume 41 lssue 4, Apr 2020

Volume 41 lssue 3, Mar 2020

Volume 41 lssue 2, Feb 2020

Volume 41 lssue 1, Jan 2020

Authors Preparing Your Manuscript Submit Your Manuscript Peer-Review Policy Ethical Policy Copyright and Permissions Word Template EndNote for References
About the Journal About the Journal Scope Advisory Board Editorial Board Contact Information
Link JoS in IOPScience Live Report in KouShare (“半语-益言”直播讲座) ScienceDB PHYSIKE Dyna Sense(鼎信优威)
WeChat ID
Mobile Terminal

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2

Export File

Format

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Content

Citation Only

Citation and Abstract

Citation