| Citation: |
Wang Chong, Zhang Jincheng, Hao Yue, Yang Yan. Degradation Under High-Field Stress and Effects of UV Irradiation on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2006, 27(8): 1436-1440.
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Wang C, Zhang J C, Hao Y, Yang Y. Degradation Under High-Field Stress and Effects of UV Irradiation on AlGaN/GaN HEMTs[J]. Chin. J. Semicond., 2006, 27(8): 1436.
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Degradation Under High-Field Stress and Effects of UV Irradiation on AlGaN/GaN HEMTs
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Abstract
After 3E4s of high-field stress,the drain current and transconductance of AlGaN/GaN HEMTs grown on sapphire are decreased by 5.2% and 7.6%,respectively.The degradation is more obvious than under high stress bias.The reason for this is investigated and compared to the current collapse that occurs under DC sweeping.The effects of UV irradiation on the recovery of the devices are observed.UV illumination can eliminate the DC sweeping current collapse,but it cannot reverse the degradation characteristics caused by the high-field stress.-
Keywords:
- AlGaN/GaN,
- HEMT,
- hot electron,
- electron trap
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References
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Proportional views
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