Chin. J. Semicond. > Volume 2 > Issue 4 > Article Number: 277

GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究

王永晨

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Abstract: 本文采用漂移扩散与扩散模型,对双层VPE GaAs浓度分布进行了数学模拟,找出了有源层杂质初始分布和最终分布,从而找到了浓度过渡区宽度的解析解.与实验结果取得了好的一致. 文中还给出了实验测定的杂质 Sn在 VPE GaAs气-固相间的分配系数.给出了浓度分布的理论计算公式.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 April 1981

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