Chin. J. Semicond. > 1981, Volume 2 > Issue 4 > 277-287
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GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究

王永晨

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(4): 277-287
      王永晨. GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究[J]. 半导体学报(英文版), 1981, 2(4): 277-287.
      Citation:
      王永晨. GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究[J]. 半导体学报(英文版), 1981, 2(4): 277-287.
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      • Received Date: 2015-08-20

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