Chin. J. Semicond. > Volume 2 > Issue 4 > Article Number: 288

P型硅MOS结构C(t)不稳定性研究

马鑫荣 , 田立林 and 李志坚

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Abstract: 对P型硅的C(t)和C(V)特性的不稳定性进行了细致的实验研究.给出了一个能满意地定性解释所观察到的各种现象的物理模型.利用硼注入到栅周围的硅中,可有效地消除上述不稳定性.但实验证明,此时若要利用 MOS C(t)特性来决定半导体少子寿命,必须对样品进行适当的处理.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 April 1981

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