Chin. J. Semicond. > Volume 2 > Issue 4 > Article Number: 298

用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命

马鑫荣 , 田立林 and 李志坚

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 半导体表面层内存在高复合中心时,zcrbst公式需要加以修正.经修正后的公式表明,Zerbst图是非线性的,利用它可同时决定表面层内少子寿命、体内少子寿命及高复合表面层的大致深度.实验结果与理论得到了很好的吻合.

Search

Advanced Search >>

Article Metrics

Article views: 1658 Times PDF downloads: 936 Times Cited by: 0 Times

History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 April 1981

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误