Chin. J. Semicond. > Volume 2 > Issue 4 > Article Number: 307

GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析

俞冠高 , 金立荣 and 张崇仁

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Abstract: 由于多层外延材料浓度和厚度的不均匀性,实验二极管的击穿电压V_B有较大的差别.为此对给定的掺杂分布进行V_B、耗尽宽度及电场的分析和计算.从实验中找到室温下掺杂分布和伏安特性之间的对应关系.实际选择管芯时,应根据击穿电压值和大电流下的伏安特性曲线进行挑选.这种挑选管芯的方法已在器件批量生产中应用.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 April 1981

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