Chin. J. Semicond. > 1981, Volume 2 > Issue 4 > 307-316
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GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析

俞冠高 , 金立荣 and 张崇仁

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(4): 307-316
      俞冠高, 金立荣, 张崇仁. GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析[J]. 半导体学报(英文版), 1981, 2(4): 307-316.
      Citation:
      俞冠高, 金立荣, 张崇仁. GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析[J]. 半导体学报(英文版), 1981, 2(4): 307-316.
      shu

      • Received Date: 2015-08-20

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