Chin. J. Semicond. > Volume 10 > Issue 12 > Article Number: 952

硅中Mo-B络合物的电荷分布

吴汲安 , 周洁 and 张大仁

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Abstract: 我们对硅中Mo-B络合物的电子态作了SW-Xα自洽计算.通过体系电荷分布分析,结合前文Pd-B络合物的结果,对已被广为接受的描写间隙位过渡金属杂质和替代位IIIA族受主杂质络合物的离子模型的正确性提出了怀疑.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 December 1989

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