Chin. J. Semicond. > Volume 18 > Issue 8 > Article Number: 598

用Van der Pauw法研究硼重掺杂金刚石薄膜电学性质

陈光华 , 张兴旺 and 季亚英

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Abstract: 以B2O3作掺杂剂,用热丝辅助化学气相沉积法成功合成了硼掺杂半导体金刚石薄膜.用VanderPauw法测量了掺硼金刚石薄膜的电阻率、霍耳迁移率以及载流子浓度随温度的变化关系.实验结果表明:杂质硼原子的激活能为0.078eV,室温迁移率为18cm2·V-1·s-1,远小于单晶金刚石的空穴迁移率.并根据实验结果对金刚石薄膜的导电机制、散射机制等作了分析.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1997

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