Chin. J. Semicond. > Volume 18 > Issue 8 > Article Number: 592

InP系列多薄层异质结构材料光致发光谱温度特性的实验研究

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Abstract: 本文报告了InP系列多薄层异质结构材料变温光致发光(PL)谱的正常及异常温度特性;观测到InGaAsP单层单量子阱室温下光致发光峰能却比10K下光致发光峰能高的实验事实.提出了外延层分为岛状、短程有序起始生长区、过渡区、多元均匀混晶区模型来解释PL谱低温下局部温度特性异常问题;认为PL谱反常温度特性与晶格弛豫有关.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1997

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