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Chin. J. Semicond. > Volume 15 > Issue 10 > Article Number: 670

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多晶砷化镓薄膜的制备及其性能研究

高元恺，韩爱珍，赵永春，林逸青

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Abstract: 利用扫描电子显微镜、Ｘ－射线衍射仪，分光光度计和Ｃ－Ｖ测试仪对电沉积法制备的多晶砷化镓薄膜进行了测试．结果表明薄膜的成分接近化学计量的ＧａＡｓ．根据薄膜的光吸收曲线和Ｍｏｔｔ－Ｓｃｈｏｔｔｋｙ曲线计算了带隙值和能级位置．最后，测量了薄膜／电解液结的光电特性．

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1994

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