Abstract: 利用扫描电子显微镜、X-射线衍射仪,分光光度计和C-V测试仪对电沉积法制备的多晶砷化镓薄膜进行了测试.结果表明薄膜的成分接近化学计量的GaAs.根据薄膜的光吸收曲线和Mott-Schottky曲线计算了带隙值和能级位置.最后,测量了薄膜/电解液结的光电特性.
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Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1994
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