Chin. J. Semicond. > Volume 16 > Issue 8 > Article Number: 611

非晶态发射极晶体管中发射结电流密度的横向分布

林绪伦,朱恩均

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Abstract: 本文对于由非晶硅和单晶硅两个区域构成的发射区结构,计算了利用非晶硅垂直电阻的镇流作用后发射结直流电流密度的横向分布,并给出发射极有效半宽度与发射区方块电阻及基区方块电阻的关系曲线.这些分析有助于非晶硅发射极微波功率管的性能的提高.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1995

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