Chin. J. Semicond. > Volume 14 > Issue 11 > Article Number: 708

薄栅SiO_2相关击穿电荷的研究

许铭真 , 谭长华 and 王阳元

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Abstract: 在恒流应力条件下,用时间相关介质击穿(TDDB)特性,研究了Ar-O_2热生长SiO_2的时间相关击穿的电荷性质。研究结果表明:(1)相关击穿电荷(Q_(BD))不是常数,而是与氧化层电场强度(E_(OX))有关;(2)阳极相关击穿电场(E_(BD))近似为常数;(3)电场加速因子( β)不是常数,它亦不是与E_(OX)~(-2)成正比,而是呈更为复杂的电场依赖关系。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 November 1993

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