Chin. J. Semicond. > Volume 12 > Issue 5 > Article Number: 313

亚微米MOSFET的计算机模拟

张义门 and 滕建旭

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Abstract: 本文阐述了在考虑载流子能量输运的基础上建立起来的亚微米MOSFET的数值模型.在计入能量弛豫时间和量子沟道展宽效应的基础上提出一种改进的迁移率模型.数值结果表明理论和实验符合得相当好.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1991

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