Chin. J. Semicond. > Volume 14 > Issue 11 > Article Number: 676

双单量子阱材料的调制光谱研究

章灵军 , 沈学础 and 王太宏

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Abstract: 本文采用光调制光谱方法测量了GaAs/Ga_(1-x)Al_xAs双单量子阱材料的光调制反射光谱(PR),同时观察到了二个单量子阱中的带间激子跃迁,采用电场调制线形可以拟合出激子跃迁的能量,与简单的有限方势阱模型的计算结果符合。并且由调制反射光谱中的Franz-Keldysh振荡,计算得到材料表面内建电场约为29.3kV/cm。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 November 1993

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