Chin. J. Semicond. > Volume 16 > Issue 8 > Article Number: 623

Ⅰ类-Ⅱ类混合GaAs/AlAs量子阱中自由载流子散射导致的激子展宽

刘伟,罗克俭,江德生,张耀辉,杨小平

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Abstract: 我们在Ⅰ类-Ⅱ类混合GaAs/AlAs非对称量子阱结构的样品上,在较低的激发光强下在宽阱中获得了较高密度的光生电子积累.利用光致发光方法详细地研究了自由载流子散射对激子展宽的贡献,发现低温下随着载流子密度的增加,载流子散射导致的激子展宽随之增加,在一定激发光强下光荧光谱上出现77K激子线宽大于室温激子线宽的现象.我们根据载流子对激子态的散射理论进行了计算,发现实验结果和理论预言符合得很好。

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1995

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