Dual-phase coexistence enables to alleviate resistance drift in phase-change films

Tong Wu; Chen Chen; Jinyi Zhu; Guoxiang Wang; Shixun Dai

doi:10.1088/1674-4926/24040013

J. Semicond. > 2024, Volume 45 > Issue 7 > 072303

ARTICLES

Dual-phase coexistence enables to alleviate resistance drift in phase-change films

Tong Wu¹, Chen Chen¹, Jinyi Zhu¹, Guoxiang Wang^{1, 2,} and Shixun Dai^{1, 2}

+ Author Affiliations

Corresponding author: Guoxiang Wang, wangguoxiang@nbu.edu.cn

DOI: 10.1088/1674-4926/24040013

Abstract: The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge₂Sb₂Te₅ (GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.

Key words: phase change films, X-ray methods, resistance drift, optical band gap

References

[1]	Ding K, Wang J, Zhou Y, et al. Phase-change heterostructure enables ultralow noise and drift for memory operation. Science, 2019, 366, 210 doi: 10.1126/science.aay0291
[2]	Zhang W, Mazzarello R, Wuttig M, et al. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nat Rev Mater, 2019, 4, 150 doi: 10.1038/s41578-018-0076-x
[3]	Zhao J, Song W X, Xin T, et al. Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials. Nat Commun, 2021, 12, 1 doi: 10.1038/s41467-020-20314-w
[4]	Xu M, Xu M, Miao X S. Deep Machine learning unravels the structural origin of mid-gap states in chalcogenide glass for high-density memory integration. InfoMat, 2022, 4, e12315 doi: 10.1002/inf2.12315
[5]	Xu M, Xu Q D, Gu R C, et al. Tailoring mid-gap states of chalcogenide glass by pressure-induced hypervalent bonding towards the design of electrical switching materials. Adv Funct Mater, 2023, 33, 2304926 doi: 10.1002/adfm.202304926
[6]	Luckas J, Piarristeguy A, Bruns G, et al. Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys. J Appl Phys, 2013, 113, 023704 doi: 10.1063/1.4769871
[7]	Zhang W, Ma E. Unveiling the structural origin to control resistance drift in phase-change memory materials. Mater Today, 2020, 41, 156 doi: 10.1016/j.mattod.2020.07.016
[8]	Liu B, Li K, Liu W, et al. Multi-level phase-change memory with ultralow power consumption and resistance drift. Sci Bull, 2021, 66, 2217 doi: 10.1016/j.scib.2021.07.018
[9]	Boniardi M, lelmini D, Lavizzari S, et al. Statistics of resistance drift due to structural relaxation in phase-change memory arrays. IEEE Trans Electron Dev, 2010, 57, 2690 doi: 10.1109/TED.2010.2058771
[10]	Li C, Hu C, Wang J, et al. Understanding phase change materials with unexpectedly low resistance drift for phase-change memories. J Mater Chem C, 2018, 6, 3387 doi: 10.1039/C8TC00222C
[11]	Chen C, Zhu J, Chen Y, et al. Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge₂Sb₂Te₅ materials for phase-change neuron synaptic devices. J Alloys Compd, 2022, 892, 162148 doi: 10.1016/j.jallcom.2021.162148
[12]	Zhou L, Yang Z, Wang X, et al. Resistance drift suppression utilizing GeTe/Sb₂Te₃ superlattice-like phase-change materials. Adv Electron Mater, 2020, 6, 1900781 doi: 10.1002/aelm.201900781
[13]	Rao F, Song Z, Xia M J, et al. High speed phase change memory based on SnTe-doped Ge₂Sb₂Te₅ material. Electrochem Solid State Lett, 2011, 15, 59 doi: 10.1149/2.006203esl
[14]	Ebrahimi S, Yarmand B, Naderi N. Effect of the sulfur concentration on the optical band gap energy and Urbach tail of spray-deposited ZnS films. Adv Ceram Prog, 2017, 3, 6 doi: 10.30501/ACP.2017.90759
[15]	Wang K, Wamwangi D, Ziegler S, et al. Influence of Sn doping upon the phase change characteristics of Ge₂Sb₂Te₅. Phys Status Solidi A, 2004, 201, 3087 doi: 10.1002/pssa.200406885
[16]	Sohila S, Rajalakshmi M, Ghosh C, et al. Optical and Raman scattering studies on SnS nanoparticles. J Alloys Compd, 2011, 509, 5843 doi: 10.1016/j.jallcom.2011.02.141
[17]	Lu Y, Song S, Shen X, et al. Phase change characteristics of Sb-rich Ga−Sb−Se materials. J Alloys Compd, 2014, 586, 669 doi: 10.1016/j.jallcom.2013.10.076
[18]	Vidal J, Lany S, d’Avezac M, et al. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Appl Phys Lett, 2012, 100, 032104 doi: 10.1063/1.3675880
[19]	Fantini P, Brazzelli S, Cazzini E, et al. Band gap widening with time induced by structural relaxation in amorphous Ge₂Sb₂Te₅ films. Appl Phys Lett, 2012, 100, 013505 doi: 10.1063/1.3674311
[20]	Lan R, Otoo S L, Yuan P, et al. Thermoelectric properties of Sn doped GeTe thin films. Appl Surf Sci, 2020, 507, 145025 doi: 10.1016/j.apsusc.2019.145025
[21]	Gu Y, Song S, Song Z, et al. Si_xSb₂Te materials with stable phase for phase change random access memory applications. J Appl Phys, 2012, 111(5), 054319 doi: 10.1063/1.3693557

Fig. 1. (Color online) (a) Relationship between sheet resistance and annealing temperature at heating rate of 30 °C/min. (b) Plot of failure time versus reciprocal temperature and (c) sheet resistance as a function of time for SnS-doped GST films at 50 °C for up to 10³ s.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Plot of (αhν)^1/2 vs. hν for pure GST and SnS-doped GST samples. (b) Relationship between electrical conductivity and the reciprocal temperature for amorphous GST and SnS-doped GST films.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) X-ray diffraction patterns of as-deposited and annealed (a) (SnS)_8.8(GST)_91.2, (b) (SnS)_35.1(GST)_64.9, and (c) (SnS)_54.6(GST)_45.4 films.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Raman scattering spectra of as-deposited and annealed (a) pure SnS, (b) (SnS)_8.8(GST)_91.2, (c) (SnS)_35.1(GST)_64.9, and (d) (SnS)_54.6(GST)_45.4, respectively.

DownLoad: Full-Size Img PowerPoint

[1]	Ding K, Wang J, Zhou Y, et al. Phase-change heterostructure enables ultralow noise and drift for memory operation. Science, 2019, 366, 210 doi: 10.1126/science.aay0291
[2]	Zhang W, Mazzarello R, Wuttig M, et al. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nat Rev Mater, 2019, 4, 150 doi: 10.1038/s41578-018-0076-x
[3]	Zhao J, Song W X, Xin T, et al. Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials. Nat Commun, 2021, 12, 1 doi: 10.1038/s41467-020-20314-w
[4]	Xu M, Xu M, Miao X S. Deep Machine learning unravels the structural origin of mid-gap states in chalcogenide glass for high-density memory integration. InfoMat, 2022, 4, e12315 doi: 10.1002/inf2.12315
[5]	Xu M, Xu Q D, Gu R C, et al. Tailoring mid-gap states of chalcogenide glass by pressure-induced hypervalent bonding towards the design of electrical switching materials. Adv Funct Mater, 2023, 33, 2304926 doi: 10.1002/adfm.202304926
[6]	Luckas J, Piarristeguy A, Bruns G, et al. Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys. J Appl Phys, 2013, 113, 023704 doi: 10.1063/1.4769871
[7]	Zhang W, Ma E. Unveiling the structural origin to control resistance drift in phase-change memory materials. Mater Today, 2020, 41, 156 doi: 10.1016/j.mattod.2020.07.016
[8]	Liu B, Li K, Liu W, et al. Multi-level phase-change memory with ultralow power consumption and resistance drift. Sci Bull, 2021, 66, 2217 doi: 10.1016/j.scib.2021.07.018
[9]	Boniardi M, lelmini D, Lavizzari S, et al. Statistics of resistance drift due to structural relaxation in phase-change memory arrays. IEEE Trans Electron Dev, 2010, 57, 2690 doi: 10.1109/TED.2010.2058771
[10]	Li C, Hu C, Wang J, et al. Understanding phase change materials with unexpectedly low resistance drift for phase-change memories. J Mater Chem C, 2018, 6, 3387 doi: 10.1039/C8TC00222C
[11]	Chen C, Zhu J, Chen Y, et al. Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge₂Sb₂Te₅ materials for phase-change neuron synaptic devices. J Alloys Compd, 2022, 892, 162148 doi: 10.1016/j.jallcom.2021.162148
[12]	Zhou L, Yang Z, Wang X, et al. Resistance drift suppression utilizing GeTe/Sb₂Te₃ superlattice-like phase-change materials. Adv Electron Mater, 2020, 6, 1900781 doi: 10.1002/aelm.201900781
[13]	Rao F, Song Z, Xia M J, et al. High speed phase change memory based on SnTe-doped Ge₂Sb₂Te₅ material. Electrochem Solid State Lett, 2011, 15, 59 doi: 10.1149/2.006203esl
[14]	Ebrahimi S, Yarmand B, Naderi N. Effect of the sulfur concentration on the optical band gap energy and Urbach tail of spray-deposited ZnS films. Adv Ceram Prog, 2017, 3, 6 doi: 10.30501/ACP.2017.90759
[15]	Wang K, Wamwangi D, Ziegler S, et al. Influence of Sn doping upon the phase change characteristics of Ge₂Sb₂Te₅. Phys Status Solidi A, 2004, 201, 3087 doi: 10.1002/pssa.200406885
[16]	Sohila S, Rajalakshmi M, Ghosh C, et al. Optical and Raman scattering studies on SnS nanoparticles. J Alloys Compd, 2011, 509, 5843 doi: 10.1016/j.jallcom.2011.02.141
[17]	Lu Y, Song S, Shen X, et al. Phase change characteristics of Sb-rich Ga−Sb−Se materials. J Alloys Compd, 2014, 586, 669 doi: 10.1016/j.jallcom.2013.10.076
[18]	Vidal J, Lany S, d’Avezac M, et al. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Appl Phys Lett, 2012, 100, 032104 doi: 10.1063/1.3675880
[19]	Fantini P, Brazzelli S, Cazzini E, et al. Band gap widening with time induced by structural relaxation in amorphous Ge₂Sb₂Te₅ films. Appl Phys Lett, 2012, 100, 013505 doi: 10.1063/1.3674311
[20]	Lan R, Otoo S L, Yuan P, et al. Thermoelectric properties of Sn doped GeTe thin films. Appl Surf Sci, 2020, 507, 145025 doi: 10.1016/j.apsusc.2019.145025
[21]	Gu Y, Song S, Song Z, et al. Si_xSb₂Te materials with stable phase for phase change random access memory applications. J Appl Phys, 2012, 111(5), 054319 doi: 10.1063/1.3693557

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Received: 09 April 2024 Revised: 30 April 2024 Online: Accepted Manuscript: 11 May 2024Uncorrected proof: 11 May 2024Published: 15 July 2024

Article Navigation > Journal of Semiconductors > 2024 > 45(7): 072303

Tong Wu, Chen Chen, Jinyi Zhu, Guoxiang Wang, Shixun Dai. Dual-phase coexistence enables to alleviate resistance drift in phase-change films[J]. Journal of Semiconductors, 2024, 45(7): 072303. doi: 10.1088/1674-4926/24040013 ****T Wu, C Chen, J Y Zhu, G X Wang, and S X Dai, Dual-phase coexistence enables to alleviate resistance drift in phase-change films[J]. J. Semicond., 2024, 45(7), 072303 doi: 10.1088/1674-4926/24040013

Citation:

Tong Wu, Chen Chen, Jinyi Zhu, Guoxiang Wang, Shixun Dai. Dual-phase coexistence enables to alleviate resistance drift in phase-change films[J]. Journal of Semiconductors, 2024, 45(7): 072303. doi: 10.1088/1674-4926/24040013 ****

T Wu, C Chen, J Y Zhu, G X Wang, and S X Dai, Dual-phase coexistence enables to alleviate resistance drift in phase-change films[J]. J. Semicond., 2024, 45(7), 072303 doi: 10.1088/1674-4926/24040013

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Dual-phase coexistence enables to alleviate resistance drift in phase-change films

DOI: 10.1088/1674-4926/24040013

Tong Wu¹,
Chen Chen¹,
Jinyi Zhu¹,
Guoxiang Wang^{1, 2,},
Shixun Dai^{1, 2}

1.
Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China
2.
Institute of Ocean Engineering, Ningbo University, Ningbo 315211, China

More Information

Tong Wu got his bachelor’s degree in 2021 from Chang’an University. Now he is a postgraduate student at Ningbo University under the supervision of Prof. Guoxiang Wang. His research focuses on phase change materials and photoelectric information functional films
Guoxiang Wang received his doctoral degree from Shanghai Institute of Technical Physics, CAS, Shanghai, China, in 2014. He is currently a Professor with the Institute of Advanced Technology, Ningbo University, Ningbo, China. His current research interests inclde Flexible thermoelectric materials and devices and photoelectric information functional films
Corresponding author: wangguoxiang@nbu.edu.cn
Received Date: 2024-04-09
Revised Date: 2024-04-30

Available Online: 2024-05-11

Abstract

Abstract

The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge₂Sb₂Te₅ (GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.
- phase change films,
- X-ray methods,
- resistance drift,
- optical band gap

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References(21)

References

[1]	Ding K, Wang J, Zhou Y, et al. Phase-change heterostructure enables ultralow noise and drift for memory operation. Science, 2019, 366, 210 doi: 10.1126/science.aay0291
[2]	Zhang W, Mazzarello R, Wuttig M, et al. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nat Rev Mater, 2019, 4, 150 doi: 10.1038/s41578-018-0076-x
[3]	Zhao J, Song W X, Xin T, et al. Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials. Nat Commun, 2021, 12, 1 doi: 10.1038/s41467-020-20314-w
[4]	Xu M, Xu M, Miao X S. Deep Machine learning unravels the structural origin of mid-gap states in chalcogenide glass for high-density memory integration. InfoMat, 2022, 4, e12315 doi: 10.1002/inf2.12315
[5]	Xu M, Xu Q D, Gu R C, et al. Tailoring mid-gap states of chalcogenide glass by pressure-induced hypervalent bonding towards the design of electrical switching materials. Adv Funct Mater, 2023, 33, 2304926 doi: 10.1002/adfm.202304926
[6]	Luckas J, Piarristeguy A, Bruns G, et al. Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys. J Appl Phys, 2013, 113, 023704 doi: 10.1063/1.4769871
[7]	Zhang W, Ma E. Unveiling the structural origin to control resistance drift in phase-change memory materials. Mater Today, 2020, 41, 156 doi: 10.1016/j.mattod.2020.07.016
[8]	Liu B, Li K, Liu W, et al. Multi-level phase-change memory with ultralow power consumption and resistance drift. Sci Bull, 2021, 66, 2217 doi: 10.1016/j.scib.2021.07.018
[9]	Boniardi M, lelmini D, Lavizzari S, et al. Statistics of resistance drift due to structural relaxation in phase-change memory arrays. IEEE Trans Electron Dev, 2010, 57, 2690 doi: 10.1109/TED.2010.2058771
[10]	Li C, Hu C, Wang J, et al. Understanding phase change materials with unexpectedly low resistance drift for phase-change memories. J Mater Chem C, 2018, 6, 3387 doi: 10.1039/C8TC00222C
[11]	Chen C, Zhu J, Chen Y, et al. Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge₂Sb₂Te₅ materials for phase-change neuron synaptic devices. J Alloys Compd, 2022, 892, 162148 doi: 10.1016/j.jallcom.2021.162148
[12]	Zhou L, Yang Z, Wang X, et al. Resistance drift suppression utilizing GeTe/Sb₂Te₃ superlattice-like phase-change materials. Adv Electron Mater, 2020, 6, 1900781 doi: 10.1002/aelm.201900781
[13]	Rao F, Song Z, Xia M J, et al. High speed phase change memory based on SnTe-doped Ge₂Sb₂Te₅ material. Electrochem Solid State Lett, 2011, 15, 59 doi: 10.1149/2.006203esl
[14]	Ebrahimi S, Yarmand B, Naderi N. Effect of the sulfur concentration on the optical band gap energy and Urbach tail of spray-deposited ZnS films. Adv Ceram Prog, 2017, 3, 6 doi: 10.30501/ACP.2017.90759
[15]	Wang K, Wamwangi D, Ziegler S, et al. Influence of Sn doping upon the phase change characteristics of Ge₂Sb₂Te₅. Phys Status Solidi A, 2004, 201, 3087 doi: 10.1002/pssa.200406885
[16]	Sohila S, Rajalakshmi M, Ghosh C, et al. Optical and Raman scattering studies on SnS nanoparticles. J Alloys Compd, 2011, 509, 5843 doi: 10.1016/j.jallcom.2011.02.141
[17]	Lu Y, Song S, Shen X, et al. Phase change characteristics of Sb-rich Ga−Sb−Se materials. J Alloys Compd, 2014, 586, 669 doi: 10.1016/j.jallcom.2013.10.076
[18]	Vidal J, Lany S, d’Avezac M, et al. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Appl Phys Lett, 2012, 100, 032104 doi: 10.1063/1.3675880
[19]	Fantini P, Brazzelli S, Cazzini E, et al. Band gap widening with time induced by structural relaxation in amorphous Ge₂Sb₂Te₅ films. Appl Phys Lett, 2012, 100, 013505 doi: 10.1063/1.3674311
[20]	Lan R, Otoo S L, Yuan P, et al. Thermoelectric properties of Sn doped GeTe thin films. Appl Surf Sci, 2020, 507, 145025 doi: 10.1016/j.apsusc.2019.145025
[21]	Gu Y, Song S, Song Z, et al. Si_xSb₂Te materials with stable phase for phase change random access memory applications. J Appl Phys, 2012, 111(5), 054319 doi: 10.1063/1.3693557

Dual-phase coexistence enables to alleviate resistance drift in phase-change films

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Dual-phase coexistence enables to alleviate resistance drift in phase-change films

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