Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors

Jianfeng Ding; Xinying Liu; Yueyue Gao; Chen Dong; Gentian Yue; Furui Tan

doi:10.1088/1674-4926/24100028

J. Semicond. > 2025, Volume 46 > Issue 3 > 032401

ARTICLES

Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors

Jianfeng Ding^§, Xinying Liu^§, Yueyue Gao, Chen Dong, Gentian Yue and Furui Tan

+ Author Affiliations

Corresponding author: Yueyue Gao, gaoyueyue@henu.edu.cn; Furui Tan, frtan@henu.edu.cn

DOI: 10.1088/1674-4926/24100028CSTR: 32376.14.1674-4926.24100028

Abstract: Quantum dot (QD)-based infrared photodetector is a promising technology that can implement current monitoring, imaging and optical communication in the infrared region. However, the photodetection performance of self-powered QD devices is still limited by their unfavorable charge carrier dynamics due to their intrinsically discrete charge carrier transport process. Herein, we strategically constructed semiconducting matrix in QD film to achieve efficient charge transfer and extraction. The p-type semiconducting CuSCN was selected as energy-aligned matrix to match the n-type colloidal PbS QDs that was used as proof-of-concept. Note that the PbS QD/CuSCN matrix not only enables efficient charge carrier separation and transfer at nano-interfaces but also provides continuous charge carrier transport pathways that are different from the hoping process in neat QD film, resulting in improved charge mobility and derived collection efficiency. As a result, the target structure delivers high specific detectivity of 4.38 × 10¹² Jones and responsivity of 782 mA/W at 808 nm, which is superior than that of the PbS QD-only photodetector (4.66 × 10¹¹ Jones and 338 mA/W). This work provides a new structure candidate for efficient colloidal QD based optoelectronic devices.

Key words: quantum dot, semiconducting matrix, ligand exchange, self-powered photodetectors

References

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Fig. 1. (Color online) (a) The preparation process schematic of PbS QD-only film (control film) PbS QD/CuSCN bulk-heterojunction film (target film); the charge transport characteristics of photodetectors based on (b) OA−PbS QDs, (c) PbI₂−PbS QDs, and (d) PbI₂−PbS QDs/CuSCN hybrid mixture as active layer, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) TEM and (b) HRTEM images of PbI₂−PbS QDs/CuSCN film; EDX images of (c) Cu element and (d) Pb element of PbI₂−PbS QDs/CuSCN film; (e) UV−vis absorption spectra of control film and target film, respectively; (f) the current density−voltage curves of hole-only devices based on control film and target film as active layer, respectively (the inset shows the device structure used for the measurement).

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) UPS of PbI₂−PbS QD film; (b) energy level diagram of compositions in target photodetector; (c) steady state PL spectra of target film and control film; (d) current−voltage curves of devices based on target film and control film, where the inset shows the device structure used for the measurement.

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Fig. 4. (Color online) (a) EQE spectra of target devices and control devices; (b) I−V curves of target devices and control devices in dark; (c) light response of target devices and control devices illuminated under 808 nm laser with different intensities from 0.1 μW/cm² to 10 mW/cm²; (d) photocurrent response spectra of target devices and control devices at different wavelength; (e) R and (f) D* of target devices and control devices at different wavelength.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) R and (b) D* values of target devices and control devices irradiated with different P_light at 808 nm under 0 bias voltage; (c) P_light dependence of J_sc of target devices and control devices; (d) P_light dependence of V_oc of target devices and control devices; (e) electrochemical impedance spectra of target devices and control devices under near V_oc of 0.6 V; (f) TPC spectra of target devices and control devices.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a) SNR of target devices and control devices; (b) LDR of target devices and control devices.

DownLoad: Full-Size Img PowerPoint

Table 1. The photodetection performance of control devices and target devices.

Photodetectors	D* (Jones)	R (mA/W)	LDR (dB)	SNR (10³)	Conductivity (10⁻² mS/cm)
Control devices	4.67 × 10¹¹	338	53.98	1.02	1.25
Target devices	4.35 × 10¹²	792	75.87	3.10	2.56

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[1]	Zhu Y, Geng C, Hu L H, et al. Skin-like near-infrared II photodetector with high performance for optical communication, imaging, and proximity sensing. Chem Mater, 2023, 35(5), 2114 doi: 10.1021/acs.chemmater.2c03701
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[10]	Wadsworth A, Hamid Z, Kosco J, et al. The bulk heterojunction in organic photovoltaic, photodetector, and photocatalytic applications. Adv Mater, 2020, 32(38), 2001763 doi: 10.1002/adma.202001763
[11]	Sun X M, Wang Z Y, Du X J, et al. Design and construction of an optical communication system: Utilizing high-performance organic–inorganic hybrid perovskite-based photodetectors. Adv Optical Mater, 2024, 12(2), 2302127 doi: 10.1002/adom.202302127
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[13]	Jhang A T, Tsai P C, Tsai Y T, et al. Quantum-dots-In-double-perovskite for high-gain short-wave infrared photodetector. Adv Optical Mater, 2024, 12(29), 2401252 doi: 10.1002/adom.202401252
[14]	Ahn Y, Eom S Y, Kim G, et al. Silver telluride colloidal quantum dot solid for fast extended shortwave infrared photodetector. Adv Sci, 2024, 32(27), 2407453 doi: 10.1002/advs.202407453
[15]	Sharma R, Henderson L N, Sankar P, et al. Recent advancements in nanomaterials for near-infrared to long-wave infrared photodetectors. Adv Optical Mater, 2024, 33(1), 2401821 doi: 10.1002/adom.202401821
[16]	Liu J, Liu P L, Chen D Y, et al. A near-infrared colloidal quantum dot imager with monolithically integrated readout circuitry. Nat Electron, 2022, 5(7), 443 doi: 10.1038/s41928-022-00779-x
[17]	Dong H R, Xuan T T, Xie R J. Lead sulfide quantum dot-linear low-density polyethylene composites for near-infrared Mini-LEDs. J Lumin, 2024, 273, 120707 doi: 10.1016/j.jlumin.2024.120707
[18]	Xiao G N, Liang T H, Wang X M, et al. Reduced surface trap states of PbS quantum dots by acetonitrile treatment for efficient SnO₂-based PbS quantum dot solar cells. ACS Omega, 2024, 9(10), 12211 doi: 10.1021/acsomega.4c00208
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[20]	Taghipour N, Tanriover I, Dalmases M, et al. Ultra-thin infrared optical gain medium and optically-pumped stimulated emission in PbS colloidal quantum dot LEDs. Adv Funct Mater, 2022, 32(27), 2200832 doi: 10.1002/adfm.202200832
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[24]	Kennehan E R, Munson K T, Grieco C, et al. Influence of ligand structure on excited state surface chemistry of lead sulfide quantum dots. J Am Chem Soc, 2021, 143(34), 13824 doi: 10.1021/jacs.1c06248
[25]	Chernomordik B D, Marshall A R, Pach G F, et al. Quantum dot solar cell fabrication protocols. Chem Mater, 2017, 29(1), 189 doi: 10.1021/acs.chemmater.6b02939
[26]	Martinez M S, Nolen M A, Pompetti N F, et al. Controlling electronic coupling of acene chromophores on quantum dot surfaces through variable-concentration ligand exchange. ACS Nano, 2023, 17(15), 14916 doi: 10.1021/acsnano.3c03498
[27]	Chen H, Chen J. High performance near-infrared photodetector based on PbS quantum dots and graphene. Sens Actuat A Phys, 2022, 339, 113508 doi: 10.1016/j.sna.2022.113508
[28]	Sheng L N, Yi C, Zheng L Y, et al. Solution-processed broadband photodetectors without transparent conductive oxide electrodes. J Mater Chem C, 2022, 10(7), 2783 doi: 10.1039/D1TC04278E
[29]	Beygi H, Sajjadi S A, Babakhani A, et al. Halide-, hybrid-, and perovskite-functionalized light absorbing quantum materials of p–i–n heterojunction solar cells. ACS Appl Mater Interfaces, 2018, 10(36), 30283 doi: 10.1021/acsami.8b06967
[30]	Hatch S M, Briscoe J, Dunn S. A self-powered ZnO-nanorod/CuSCN UV photodetector exhibiting rapid response. Adv Mater, 2013, 25(6), 867 doi: 10.1002/adma.201204488
[31]	Qiao H, Huang Z Y, Ren X H, et al. Self-powered photodetectors based on 2D materials. Adv Optical Mater, 2020, 8(1), 1900765 doi: 10.1002/adom.201900765
[32]	Liu S L, Yan S K, Zhu Z Y, et al. Embedding PbS quantum dots in MAPbCl_0.5Br_2.5 perovskite single crystal for near-infrared detection. J Soc Inf Disp, 2022, 30(6), 531 doi: 10.1002/jsid.1099
[33]	Tan L, Li P D, Sun B Q, et al. Stabilities related to near-infrared quantum dot-based solar cells: The role of surface engineering. ACS Energy Lett, 2017, 2(7), 1573 doi: 10.1021/acsenergylett.7b00194
[34]	Wang H B, Desbordes M, Xiao Y, et al. Highly stable interdigitated PbS quantum dot and ZnO nanowire solar cells with an automatically embedded electron-blocking layer. ACS Appl Energy Mater, 2021, 4(6), 5918 doi: 10.1021/acsaem.1c00723
[35]	Asandulesa M, Kostromin S, Aleksandrov A, et al. The effect of PbS quantum dots on molecular dynamics and conductivity of PTB7: PC71BM bulk heterojunction as revealed by dielectric spectroscopy. Phys Chem Chem Phys, 2022, 24(16), 9589 doi: 10.1039/D2CP00770C
[36]	Li X Q, Zhou D X, Hao H X, et al. Vibrational relaxation dynamics of a semiconductor copper(I) thiocyanate (CuSCN) film as a hole-transporting layer. J Phys Chem Lett, 2020, 11(2), 548 doi: 10.1021/acs.jpclett.9b03480
[37]	Feng W, Qin C Q, Shen Y T, et al. A layer-nanostructured assembly of PbS quantum dot/multiwalled carbon nanotube for a high-performance photoswitch. Sci Rep, 2014, 4(1), 3777 doi: 10.1038/srep03777
[38]	Mohan L, Ratnasingham S R, Panidi J, et al. Determining out-of-plane hole mobility in CuSCN via the time-of-flight technique to elucidate its function in perovskite solar cells. ACS Appl Mater Interfaces, 2021, 13(32), 38499 doi: 10.1021/acsami.1c09750
[39]	Mocatta D, Cohen G, Schattner J, et al. Heavily doped semiconductor nanocrystal quantum dots. Science, 2011, 332(6025), 77 doi: 10.1126/science.1196321
[40]	Mirzehmet A, Ohtsuka T, Abd Rahman S A, et al. Surface termination of solution-processed CH₃NH₃PbI₃ perovskite film examined using electron spectroscopies. Adv Mater, 2021, 33(3), 2004981 doi: 10.1002/adma.202004981
[41]	Li C, Li J X, Li C Y, et al. Sensitive photodetector arrays based on patterned CH₃NH₃PbBr₃ single crystal microplate for image sensing application. Adv Optical Mater, 2021, 9(15), 2100371 doi: 10.1002/adom.202100371
[42]	Fan Q S, Zhang H Q, Li K Q, et al. Narrowband and broadband dual-mode perovskite photodetector for RGB detection application. Adv Optical Mater, 2023, 11(16), 2300272 doi: 10.1002/adom.202300272
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Received: 20 October 2024 Revised: 08 November 2024 Online: Accepted Manuscript: 27 November 2024Uncorrected proof: 07 February 2025Published: 14 March 2025

Article Navigation > Journal of Semiconductors > 2025 > 46(3): 032401

Jianfeng Ding, Xinying Liu, Yueyue Gao, Chen Dong, Gentian Yue, Furui Tan. Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors[J]. Journal of Semiconductors, 2025, 46(3): 032401. doi: 10.1088/1674-4926/24100028 ****J F Ding, X Y Liu, Y Y Gao, C Dong, G T Yue, and F R Tan, Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors[J]. J. Semicond., 2025, 46(3), 032401 doi: 10.1088/1674-4926/24100028

Citation:

J F Ding, X Y Liu, Y Y Gao, C Dong, G T Yue, and F R Tan, Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors[J]. J. Semicond., 2025, 46(3), 032401 doi: 10.1088/1674-4926/24100028

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Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors

DOI: 10.1088/1674-4926/24100028

CSTR: 32376.14.1674-4926.24100028

Key Laboratory of Photovoltaic Materials, School of Future Technology, Henan University, Kaifeng 475004, China

More Information

Jianfeng Ding got his bachelor's degree in 2017 from Lanzhou University and his master's degree in 2024 from Henan University. His research focuses on inorganic wide-bandgap perovskite nanocrystal photodetectors and chalcogenide quantum dot photodetectors, with a particular interest in their applications in natural light detection
Xinying Liu graduated from Xiangtan University in 2022 with a bachelor's degree and from Henan University in 2025 with a master's degree. Her research focuses on colloidal chalcogenide quantum dot photodetectors, with a particular interest in their applications in near-infrared light detection
Furui Tan：Fuirui Tan received his doctoral degree in Material Physics and Chemistry from the Institute of Semiconductors, Chinese Academy of Sciences in 2011. He is currently a professor at the School of Future Technology, Henan University. His research focuses on the large-area film fabrication of metal halide perovskite materials, as well as the development of optoelectronic photodetectors based on nanomaterials and heterostructures
Corresponding author: gaoyueyue@henu.edu.cn; frtan@henu.edu.cn
Received Date: 2024-10-20
Revised Date: 2024-11-08

Available Online: 2024-11-27

Abstract

Abstract

Quantum dot (QD)-based infrared photodetector is a promising technology that can implement current monitoring, imaging and optical communication in the infrared region. However, the photodetection performance of self-powered QD devices is still limited by their unfavorable charge carrier dynamics due to their intrinsically discrete charge carrier transport process. Herein, we strategically constructed semiconducting matrix in QD film to achieve efficient charge transfer and extraction. The p-type semiconducting CuSCN was selected as energy-aligned matrix to match the n-type colloidal PbS QDs that was used as proof-of-concept. Note that the PbS QD/CuSCN matrix not only enables efficient charge carrier separation and transfer at nano-interfaces but also provides continuous charge carrier transport pathways that are different from the hoping process in neat QD film, resulting in improved charge mobility and derived collection efficiency. As a result, the target structure delivers high specific detectivity of 4.38 × 10¹² Jones and responsivity of 782 mA/W at 808 nm, which is superior than that of the PbS QD-only photodetector (4.66 × 10¹¹ Jones and 338 mA/W). This work provides a new structure candidate for efficient colloidal QD based optoelectronic devices.
- quantum dot,
- semiconducting matrix,
- ligand exchange,
- self-powered photodetectors

Supplementary materials to this article can be found online at https://doi.org/10.1088/1674-4926/24100028.
^§Jianfeng Ding and Xinying Liu contributed equally to this work and should be considered as co-first authors.

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