Fig. 1.
High side driver with the proposed level shift structure
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| Citation: |
Yunwu Zhang, Jing Zhu, Guodong Sun, Cuichun Liu, Weifeng Sun, Qinsong Qian. A noise immunity improved level shift structure for a 600 V HVIC[J]. Journal of Semiconductors, 2013, 34(6): 065008. doi: 10.1088/1674-4926/34/6/065008
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Y W Zhang, J Zhu, G D Sun, C C Liu, W F Sun, Q S Qian. A noise immunity improved level shift structure for a 600 V HVIC[J]. J. Semicond., 2013, 34(6): 065008. doi: 10.1088/1674-4926/34/6/065008.
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A noise immunity improved level shift structure for a 600 V HVIC
DOI: 10.1088/1674-4926/34/6/065008
More Information
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Abstract
A novel level shift circuit featuring with high dV/dt noise immunity and improved negative VS capacity is proposed in this paper. Compared with the conventional structure, the proposed circuit adopting two cross-coupled PMOS transistors realizes the selective filtering ability by exploiting the path which filters out the noise introduced by the dV/dt. In addition, a differential noise cancellation circuit is proposed to enhance the noise immunity further. Meanwhile, the negative VS capacity is improved by unifying the detected reference voltage and the logic block's threshold voltage. A high voltage half bridge gate drive IC adopting the presented structure is experimentally realized by using a usual 600 V BCD process and achieves the stable operation up to 65 V/ns of the dV/dt characteristics.-
Keywords:
- gate driver,
- half bridge,
- dV/dt noise,
- level shift,
- negative VS capacity
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References
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