Fig. 1.
$I_{\rm D}$ -$V_{\rm G}$ curves of NMOS transistor before and after radiation.
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| Citation: |
Rongbin Hu, Yuxin Wang, Wu Lu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. Journal of Semiconductors, 2014, 35(2): 024006. doi: 10.1088/1674-4926/35/2/024006
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R B Hu, Y X Wang, W Lu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. J. Semicond., 2014, 35(2): 024006. doi: 10.1088/1674-4926/35/2/024006.
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The total dose effects on the 1/f noise of deep submicron CMOS transistors
DOI: 10.1088/1674-4926/35/2/024006
More Information
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Abstract
Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion.-
Keywords:
- total dose,
- radiation,
- 1/f noise,
- CMOS
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References
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