Fig. 1.
NF distribution of the dual-band receiver with passive or active antenna.
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| Citation: |
Songting Li, Jiancheng Li, Xiaochen Gu, Zhaowen Zhuang. Dual-band RF receiver for GPS-L1 and compass-B1 in a 55-nm CMOS[J]. Journal of Semiconductors, 2014, 35(2): 025001. doi: 10.1088/1674-4926/35/2/025001
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S T Li, J C Li, X C Gu, Z W Zhuang. Dual-band RF receiver for GPS-L1 and compass-B1 in a 55-nm CMOS[J]. J. Semicond., 2014, 35(2): 025001. doi: 10.1088/1674-4926/35/2/025001.
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Abstract
A fully integrated dual-band RF receiver with a low-IF architecture is designed and implemented for GPS-L1 and Compass-B1 in a 55-nm CMOS process. The receiver incorporates two independent IF channels with 2 or 4 MHz bandwidth to receive dual-band signals around 1.57 GHz respectively. By implementing a flexible frequency plan, the RF front-end and frequency synthesizer are shared for the dual-band operation to save power consumption and chip area, as well as avoiding LO crosstalk. A digital automatic gain control (AGC) loop is utilized to improve the receiver's robustness by optimizing the conversion gain of the analog-to-digital converter (ADC). While drawing about 20 mA per channel from a 1.2 V supply, this RF receiver achieves a minimum noise figure (NF) of about 1.8 dB, an image rejection (IMR) of more than 35 dB, a maximum voltage gain of about 122 dB, a gain dynamic range of 82 dB, and an maximum input-referred 1 dB compression point of about -36.5 dBm with an active die area of 1.5×1.4 mm2 for the whole chip.-
Keywords:
- automatic gain control,
- CMOS,
- compass,
- dual-band,
- GPS,
- RF receiver
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References
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