J. Semicond. > 2010, Volume 31 > Issue 11 > 115004

SEMICONDUCTOR INTEGRATED CIRCUITS

A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process

Ma Zhuo, Tan Xiaoqiang, Xie Lunguo and Guo Yang

+ Author Affiliations
DOI: 10.1088/1674-4926/31/11/115004

PDF

Abstract: In bandgap references, the effect caused by the input offset of the operational amplifier can be effectively reduced by the utilization of cascade bipolar junction transistors (BJTs). But in modern CMOS logic processes, due to the small value of β , the base--emitter path of BJTs has a significant streaming effect on the collector current, which leads to a large temperature drift for the reference voltage. To solve this problem, a baseemitter current compensation technique is proposed in a cascade BJT bandgap reference structure to calibrate the curvature of the output voltage to temperature. Experimental results based on the 0.13 μm logic CMOS process show that the reference voltage is 1.238 V and the temperature coefficient is 6.2 ppm/℃ within the range of -40 to 125 ℃.

Key words: bandgap reference, CMOS, BJT, base current compensating

1

Negative voltage bandgap reference with multilevel curvature compensation technique

Xi Liu, Qian Liu, Xiaoshi Jin, Yongrui Zhao, Jong-Ho Lee, et al.

Journal of Semiconductors, 2016, 37(5): 055008. doi: 10.1088/1674-4926/37/5/055008

2

Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs

Mini Bhartia, Arun Kumar Chatterjee

Journal of Semiconductors, 2015, 36(4): 044003. doi: 10.1088/1674-4926/36/4/044003

3

Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET

Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Journal of Semiconductors, 2011, 32(7): 074001. doi: 10.1088/1674-4926/32/7/074001

4

A resistorless CMOS current reference with temperature compensation

Yan Wei, Tian Xin, Li Wenhong, Liu Ran

Journal of Semiconductors, 2011, 32(3): 035006. doi: 10.1088/1674-4926/32/3/035006

5

Effect of collector bias current on the linearity of common-emitter BJT amplifiers

Li Kun, Teng Jianfu, Xuan Xiuwei

Journal of Semiconductors, 2010, 31(12): 124012. doi: 10.1088/1674-4926/31/12/124012

6

High temperature characterization of double base epilayer 4H-SiC BJTs

Zhang Qian, Zhang Yuming, Zhang Yimen, Wang Yuehu

Journal of Semiconductors, 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005

7

All-CMOS temperature compensated current reference

Zhao Zhe, Zhou Feng, Huang Shengzhuan

Journal of Semiconductors, 2010, 31(6): 065016. doi: 10.1088/1674-4926/31/6/065016

8

A novel precision curvature-compensated bandgap reference

Zhou Zekun, Ming Xin, Zhang Bo, Li Zhaoji

Journal of Semiconductors, 2010, 31(1): 015010. doi: 10.1088/1674-4926/31/1/015010

9

A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation

Zhou Zekun, Ma Yingqian, Ming Xin, Zhang Bo, Li Zhaoji, et al.

Journal of Semiconductors, 2010, 31(7): 075004. doi: 10.1088/1674-4926/31/7/075004

10

An offset-insensitive switched-capacitor bandgap reference with continuous output

Zheng Peng, Yan Wei, Zhang Ke, Li Wenhong

Journal of Semiconductors, 2009, 30(8): 085006. doi: 10.1088/1674-4926/30/8/085006

11

CMOS current controlled fully balanced current conveyor

Wang Chunhua, Zhang Qiujing, Liu Haiguang

Journal of Semiconductors, 2009, 30(7): 075009. doi: 10.1088/1674-4926/30/7/075009

12

The Bipolar Field-Effect Transistor: VII. The Unipolar Current Mode for Analog-RF Operation (Two-MOS-Gates on Pure-Base)

Jie Binbin, Sah Chih-Tang

Journal of Semiconductors, 2009, 30(3): 031001. doi: 10.1088/1674-4926/30/3/031001

13

Low voltage bandgap reference with closed loop curvature compensation

Fan Tao, Du Bo, Zhang Zheng, Yuan Guoshun

Journal of Semiconductors, 2009, 30(3): 035006. doi: 10.1088/1674-4926/30/3/035006

14

A High-PSRR CMOS Bandgap Reference Without Resistor

Zhou Qianneng, Wang Yongsheng, Yu Mingyan, Ye Yizheng, Li Hongjuan, et al.

Journal of Semiconductors, 2008, 29(8): 1517-1522.

15

A Piecewise Curvature-Corrected CMOS Bandgap Reference with Negative Feedback

Li Jinghu, Wang Yongsheng, Yu Mingyan, Ye Yizheng

Journal of Semiconductors, 2008, 29(10): 1974-1979.

16

A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation

Xing Xinpeng, Li Dongmei, Wang Zhihua

Journal of Semiconductors, 2008, 29(1): 24-28.

17

A Novel CMOS Current Mode Bandgap Reference

Xing Xinpeng, Li Dongmei, Wang Zhihua

Journal of Semiconductors, 2008, 29(7): 1249-1253.

18

A 30nA Temperature-Independent CMOS Current Reference and Its Application in an LDO

Wang Yi, He Le’nian, Yan Xiaolang

Chinese Journal of Semiconductors , 2006, 27(9): 1657-1662.

19

Sub-1V CMOS Voltage Reference Based on Weighted Vgs

Zhang Xun, Wang Peng, Jin Dongming

Chinese Journal of Semiconductors , 2006, 27(5): 774-777.

20

Bias Current Compensation Method with 41.4% Standard Deviation Reduction to MOSFET Transconductance in CMOS Circuits

Mao Xiaojian, Yang Huazhong, Wang Hui

Chinese Journal of Semiconductors , 2006, 27(5): 783-786.

  • Search

    Advanced Search >>

    GET CITATION

    Ma Zhuo, Tan Xiaoqiang, Xie Lunguo, Guo Yang. A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process[J]. Journal of Semiconductors, 2010, 31(11): 115004. doi: 10.1088/1674-4926/31/11/115004
    Ma Z, Tan X Q, Xie L G, Guo Y. A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process[J]. J. Semicond., 2010, 31(11): 115004. doi:  10.1088/1674-4926/31/11/115004.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3632 Times PDF downloads: 2675 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 24 June 2010 Online: Published: 01 November 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Ma Zhuo, Tan Xiaoqiang, Xie Lunguo, Guo Yang. A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process[J]. Journal of Semiconductors, 2010, 31(11): 115004. doi: 10.1088/1674-4926/31/11/115004 ****Ma Z, Tan X Q, Xie L G, Guo Y. A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process[J]. J. Semicond., 2010, 31(11): 115004. doi:  10.1088/1674-4926/31/11/115004.
      Citation:
      Ma Zhuo, Tan Xiaoqiang, Xie Lunguo, Guo Yang. A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process[J]. Journal of Semiconductors, 2010, 31(11): 115004. doi: 10.1088/1674-4926/31/11/115004 ****
      Ma Z, Tan X Q, Xie L G, Guo Y. A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process[J]. J. Semicond., 2010, 31(11): 115004. doi:  10.1088/1674-4926/31/11/115004.

      A curvature calibrated bandgap reference with base–emitter current compensating in a 0.13 μm CMOS process

      DOI: 10.1088/1674-4926/31/11/115004
      • Received Date: 2015-08-18
      • Accepted Date: 2010-03-21
      • Revised Date: 2010-06-24
      • Published Date: 2010-10-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return