Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1281-1284
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基于蓝宝石衬底的高性能AlGaN/GaN二维电子气材料与HEMT器件

张进城 , 郝跃 , 王冲 and 王峰祥

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Key words: MOCVD, AlGaN/GaN, 二维电子气, HEMT

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1281-1284
      张进城, 郝跃, 王冲, 王峰祥. 基于蓝宝石衬底的高性能AlGaN/GaN二维电子气材料与HEMT器件[J]. 半导体学报(英文版), 2004, 25(10): 1281-1284.
      Citation:
      张进城, 郝跃, 王冲, 王峰祥. 基于蓝宝石衬底的高性能AlGaN/GaN二维电子气材料与HEMT器件[J]. 半导体学报(英文版), 2004, 25(10): 1281-1284.
      shu

      • Received Date: 2015-08-19

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