Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1315-1319
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一个新的pMOSFET栅电流退化模型

张进城 , 郝跃 , 朱志炜 and 刘海波

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Key words: pMOSFET, 热载流子退化, 栅电流退化模型

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1315-1319
      张进城, 郝跃, 朱志炜, 刘海波. 一个新的pMOSFET栅电流退化模型[J]. 半导体学报(英文版), 2001, 22(10): 1315-1319.
      Citation:
      张进城, 郝跃, 朱志炜, 刘海波. 一个新的pMOSFET栅电流退化模型[J]. 半导体学报(英文版), 2001, 22(10): 1315-1319.
      shu

      • Received Date: 2015-08-20

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