Chin. J. Semicond. > 1996, Volume 17 > Issue 4 > 305-312
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固相外延CoSi_2薄膜作为扩散源形成n~＋p浅结技术研究

房华，李炳宗，吴卫军，邵凯，姜国宝，顾志光，黄维宁，刘平，周祖尧，朱剑豪

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(4): 305-312
      房华，李炳宗，吴卫军，邵凯，姜国宝，顾志光，黄维宁，刘平，周祖尧，朱剑豪. 固相外延CoSi_2薄膜作为扩散源形成n~＋p浅结技术研究[J]. 半导体学报(英文版), 1996, 17(4): 305-312.
      Citation:
      房华，李炳宗，吴卫军，邵凯，姜国宝，顾志光，黄维宁，刘平，周祖尧，朱剑豪. 固相外延CoSi_2薄膜作为扩散源形成n~＋p浅结技术研究[J]. 半导体学报(英文版), 1996, 17(4): 305-312.
      shu

      • Received Date: 2015-08-18

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