Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 844-848
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一种新的MOS器件亚阈区表面势分析方法

陈之昀 , 刘晓卫 , 卫建林 , 谭长华 and 许铭真

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 844-848
      陈之昀, 刘晓卫, 卫建林, 谭长华, 许铭真. 一种新的MOS器件亚阈区表面势分析方法[J]. 半导体学报(英文版), 1997, 18(11): 844-848.
      Citation:
      陈之昀, 刘晓卫, 卫建林, 谭长华, 许铭真. 一种新的MOS器件亚阈区表面势分析方法[J]. 半导体学报(英文版), 1997, 18(11): 844-848.
      shu

      • Received Date: 2015-08-19

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