Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 751-754
|

CONTENTS

硅熔体中3C-SiC的生长及6H-SiC晶型的抑制

马剑平 , 卢刚 , 雷天民 and 陈治明

+ Author Affiliations

PDF

Key words: 硅, 熔体, 碳化硅, 抑制

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2352 Times PDF downloads: 1186 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 751-754
      马剑平, 卢刚, 雷天民, 陈治明. 硅熔体中3C-SiC的生长及6H-SiC晶型的抑制[J]. 半导体学报(英文版), 2001, 22(6): 751-754.
      Citation:
      马剑平, 卢刚, 雷天民, 陈治明. 硅熔体中3C-SiC的生长及6H-SiC晶型的抑制[J]. 半导体学报(英文版), 2001, 22(6): 751-754.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return