| Citation: |
Wu Rufei, Zhang Haiying, Yin Junjian, Zhang Jian, Liu Huidong, Liu Xunchun. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. Journal of Semiconductors, 2008, 29(5): 832-835.
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Wu R F, Zhang H Y, Yin J J, Zhang J, Liu H D, Liu X C. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. J. Semicond., 2008, 29(5): 832.
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GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches
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Abstract
GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented.The impact of diode physical characteristics and electrical parameters on switch performance is discussed.A new structure for GaAs PIN diodes is proposed and the fabrication process is described.GaAs PIN diodes with an on-state resistance of ＜2.2Ω and off-state capacitance ＜20fF in the range of 100MHz to 12.1GHz are obtained.-
Keywords:
- GaAs PIN diodes,
- low-loss,
- high-isolation,
- switch
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References
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Proportional views
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