Chin. J. Semicond. > 1988, Volume 9 > Issue 3 > 308-311
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用离子注入在GaAs中形成高浓度超薄有源层

颜本达 , 史常忻 , 忻尚衡 and 周文英

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(3): 308-311
      颜本达, 史常忻, 忻尚衡, 周文英. 用离子注入在GaAs中形成高浓度超薄有源层[J]. 半导体学报(英文版), 1988, 9(3): 308-311.
      Citation:
      颜本达, 史常忻, 忻尚衡, 周文英. 用离子注入在GaAs中形成高浓度超薄有源层[J]. 半导体学报(英文版), 1988, 9(3): 308-311.
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      • Received Date: 2015-08-19

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