Chin. J. Semicond. > 1998, Volume 19 > Issue 6 > 468-471
|

CONTENTS

纳米级PtSi/Si(111)膜成形工艺与连续性研究

王培林 , 盛文斌 , 杨晶琦 and 徐达鸣

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2167 Times PDF downloads: 1543 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 June 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(6): 468-471
      王培林, 盛文斌, 杨晶琦, 徐达鸣. 纳米级PtSi/Si(111)膜成形工艺与连续性研究[J]. 半导体学报(英文版), 1998, 19(6): 468-471.
      Citation:
      王培林, 盛文斌, 杨晶琦, 徐达鸣. 纳米级PtSi/Si(111)膜成形工艺与连续性研究[J]. 半导体学报(英文版), 1998, 19(6): 468-471.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return