Chin. J. Semicond. > 2007, Volume 28 > Issue 7 > 1134-1138
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Properties of W Sub-Microtube Heater Electrode Used for PhaseChange Memory

Feng Gaoming, Liu Bo, Wu Liangcai, Song Zhitang, Feng Songlin and Chen Bomy

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Abstract: In order to reduce the reset current of C-RAM devices,a W sub-micron tube heating electrode with external diameter of 260nm was fabricated in standard 0.18μm CMOS,and its electrical performance was characterized.A typical C-RAM device was manufactured using a W sub-micron tube heating electrode,and the causes of invalidation were analyzed through fatigue behaviour testing.The results indicate that a W sub-micron tube heating electrode with favourable electrical stability and fatigue behaviour,as well as thermal stability,provides an efficient path for reducing the reset current of a C-RAM device.

Key words: phase change memory, W sub-micron tube, electrical performance, fatigue behaviour

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    Received: 18 August 2015 Revised: 08 February 2007 Online: Published: 01 July 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(7): 1134-1138
      Feng Gaoming, Liu Bo, Wu Liangcai, Song Zhitang, Feng Songlin, Chen Bomy. Properties of W Sub-Microtube Heater Electrode Used for PhaseChange Memory[J]. Journal of Semiconductors, 2007, 28(7): 1134-1138. ****Feng G M, Liu B, Wu L C, Song Z T, Feng S L, Chen B. Properties of W Sub-Microtube Heater Electrode Used for PhaseChange Memory[J]. Chin. J. Semicond., 2007, 28(7): 1134.
      Citation:
      Feng Gaoming, Liu Bo, Wu Liangcai, Song Zhitang, Feng Songlin, Chen Bomy. Properties of W Sub-Microtube Heater Electrode Used for PhaseChange Memory[J]. Journal of Semiconductors, 2007, 28(7): 1134-1138. ****
      Feng G M, Liu B, Wu L C, Song Z T, Feng S L, Chen B. Properties of W Sub-Microtube Heater Electrode Used for PhaseChange Memory[J]. Chin. J. Semicond., 2007, 28(7): 1134.
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      Properties of W Sub-Microtube Heater Electrode Used for PhaseChange Memory

      • Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Graduate University,Chinese Academy of Sciences,Beijing 100049,China

      • Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Silicon Storage Technology Inc.,Sunnyvale,CA 94086,USA

      • Received Date: 2015-08-18
      • Accepted Date: 2006-12-19
      • Revised Date: 2007-02-08
      • Published Date: 2007-07-05

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