SEMICONDUCTOR INTEGRATED CIRCUITS
Abstract: An ultra-wideband (3.1–10.6 GHz) low-noise amplifier using the 0.18 μm CMOS process is presented. It employs a wideband filter for impedance matching. The current-reused technique is adopted to lower the power consumption. The noise contributions of the second-order and third-order Chebyshev filers for input matching are analyzed and compared in detail. The measured power gain is 12.4–14.5 dB within the bandwidth. NF ranged from 4.2 to 5.4 dB in 3.1–10.6 GHz. Good input matching is achieved over the entire bandwidth. The test chip consumes 9 mW (without output buffer for measurement) with a 1.8 V power supply and occupies 0.88 mm
Key words: ultra-wideband, low-noise amplifier, CMOS
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Received: 18 August 2015 Revised: Online: Published: 01 January 2009
| Citation: |
Yang Yi, Gao Zhuo, Yang Liqiong, Huang Lingyi, Hu Weiwu. Design and analysis of a UWB low-noise amplifier in the 0.18 μm CMOS process[J]. Journal of Semiconductors, 2009, 30(1): 015001. doi: 10.1088/1674-4926/30/1/015001
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Yang Y, Gao Z, Yang L Q, Huang L Y, Hu W W. Design and analysis of a UWB low-noise amplifier in the 0.18 μm CMOS process[J]. J. Semicond., 2009, 30(1): 015001. doi: 10.1088/1674-4926/30/1/015001.
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