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Study of the effect of switching speed of the a-SiC/c-Si (p)-based, thyristor-like, ultra-high-speed switches, using two-dimensional simulation techniques
Evangelos I. Dimitriadis, Nikolaos Georgoulas
Journal of Semiconductors, 2017, 38(5): 054001. doi: 10.1088/1674-4926/38/5/054001
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2 |
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes
Dong Junrong, Huang Jie, Tian Chao, Yang Hao, Zhang Haiying, et al.
Journal of Semiconductors, 2011, 32(3): 034002. doi: 10.1088/1674-4926/32/3/034002
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Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals
Peng Yinsheng, Ye Xiaoling, Xu Bo, Jin Peng, Niu Jiebin, et al.
Journal of Semiconductors, 2010, 31(1): 012003. doi: 10.1088/1674-4926/31/1/012003
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4 |
GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution
Li Zaijin, Hu Liming, Wang Ye, Yang Ye, Peng Hangyu, et al.
Journal of Semiconductors, 2010, 31(3): 036002. doi: 10.1088/1674-4926/31/3/036002
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5 |
Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method
Yu Huiyong, Zhao Youwen, Zhan Rong, Gao Yongliang, Hui Feng, et al.
Journal of Semiconductors, 2008, 29(9): 1775-1778.
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6 |
Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition
Shi Huiling, Ma Xiaoyu, Hu Like, Chong Feng
Journal of Semiconductors, 2008, 29(1): 12-16.
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7 |
GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches
Wu Rufei, Zhang Haiying, Yin Junjian, Zhang Jian, Liu Huidong, et al.
Journal of Semiconductors, 2008, 29(5): 832-835.
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An 8~20GHz Monolithic SPDT GaAs pin Diode Switch
Wu Rufei, Yin Junjian, Liu Huidong, Zhang Haiying
Journal of Semiconductors, 2008, 29(10): 1864-1867.
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9 |
Surface Defects and Micro Defects in LEC GaAs Crystal
Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 137-140.
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A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
Dai Yang, Huang Yinglong, Liu Wei, Ma Long, Yang Fuhua, et al.
Chinese Journal of Semiconductors , 2007, 28(3): 332-336.
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Heteroepitaxy of InP/GaAs by MOCVD
Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 190-192.
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GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates
Hao Ruiting, Xu Yingqiang, Zhou Zhiqiang, Ren Zhengwei, Niu Zhichuan, et al.
Chinese Journal of Semiconductors , 2007, 28(7): 1088-1091.
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13 |
Direct Bonding of n-GaAs and p-GaN Wafers
Li Hui, He Guorong, Qu Hongwei, Shi Yan, Chong Ming, et al.
Chinese Journal of Semiconductors , 2007, 28(11): 1815-1817.
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14 |
GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment
Wang Hui, Guo Xia, Liang Ting, Liu Shiwen, Gao Guo, et al.
Chinese Journal of Semiconductors , 2006, 27(6): 1042-1045.
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15 |
Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips
Wang Huizhi, Li Fuxiao
Chinese Journal of Semiconductors , 2006, 27(6): 1125-1128.
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16 |
Ku-Band 20W GaAs Power PHEMT
Zhong Shichang, Chen Tangsheng
Chinese Journal of Semiconductors , 2006, 27(10): 1804-1807.
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17 |
A Millimeter-Wave GaAs pin Diode SPST Switch MMIC
Chen Xinyu, Jiang Youquan, Xu Zhengrong, Huang Ziqian, Li Fuxiao, et al.
Chinese Journal of Semiconductors , 2006, 27(12): 2163-2166.
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18 |
Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs
Li Haiou, Zhang Haiying, Yin Junjian, Ye Tianchun
Chinese Journal of Semiconductors , 2005, 26(12): 2281-2285.
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Properties of GaAs Based Resonant Cavity Enhanced Photodetectors
Tang Jun, Chen Hongda, Liang Kun, Du Yun, Yang Xiaohong, et al.
Chinese Journal of Semiconductors , 2005, 26(S1): 243-246.
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20 |
Ultra-Wideband Electromagnetic Radiation from GaAs Photoconductive Switches
Shi Wei，Jia Wanli, and Ji Weili
Chinese Journal of Semiconductors , 2005, 26(1): 11-15.
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