Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

Wu Chia-Song; Liu Hsing-Chung

doi:10.1088/1674-4926/30/11/114004

J. Semicond. > 2009, Volume 30 > Issue 11 > 114004

SEMICONDUCTOR DEVICES

Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

Wu Chia-Song and Liu Hsing-Chung

+ Author Affiliations

DOI: 10.1088/1674-4926/30/11/114004

Abstract: This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 ℃ because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

Key words: lanthanum oxide

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Wu Chia-Song, Liu Hsing-Chung. Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology[J]. Journal of Semiconductors, 2009, 30(11): 114004. doi: 10.1088/1674-4926/30/11/114004

Wu C S, Liu H C. Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology[J]. J. Semicond., 2009, 30(11): 114004. doi: 10.1088/1674-4926/30/11/114004.

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Received: 18 August 2015 Revised: 26 June 2009 Online: Published: 01 November 2009

This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 ℃ because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

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