J. Semicond.
Volume 46, Issue 5, May 2025
Call for Papers
Special Issue on Optoelectronic Neuromorphic Devices
Guest Editors: Zhenyi Ni, Zhongqiang Wang, Jia Huang, Xiaodong Pi
Call for Papers
Special Issue on Flexible and Smart Electronics for Sensors 4.0
Guest Editors: Zhuoran Wang, Yang Li, Qilin Hua
Call for Papers
Phase Change Materials for Reconfigurable Photonics and Electronics
Guest Edited: Hongtao Lin, Tian Gu
Call for Papers
Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices
Guest Editors: Genquan Han, Shibing Long, Yuhao Zhang, Yibo Wang
Call for Papers
Novel Semiconductor-Biochemical Sensors
Guest Editors: Zhao Li, Xiangmei Lin, Dongxian He, Yingxin Ma, Yuanjing Lin
Special Issue
Flexible Energy Devices
Guest Edited: Zhiyong Fan, Yonghua Chen, Yuanjing Lin, Yunlong Zi, Hyunhyub Ko, Qianpeng Zhang
Special Issue
Semiconductor Optoelectronic Integrated Circuits
Guest Edited: Wei Wang, Lingjuan Zhao, Dan Lu, Jianping Yao, Weiping Huang, Yong Liu, Brent Little
Special Issue
Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration
Guest Edited: Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li
Special Issue
Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing
Guest Edited: Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li
Special Issue
Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang
Guest Editors: Zhijie Wang, Chao Zhao , Fei Ding
Special Issue
Reconfigurable Computing for Energy Efficient AI Microchip Technologies
Guest Editors: Haigang Yang, Yajun Ha, Lingli Wang, Wei Zhang, Yingyan Lin
Special Issue
Semiconductor Materials Genome Initiative: New Concepts and Discoveries
Guest Editors: Suhuai Wei, Junwei Luo, Bing Huang
Special Issues
2D-materials-related physical properties and optoelectronic devices
Guest Editors: Ping-Heng Tan, Lijun Zhang, Lun Dai, Shuyun Zhou
Special Issue
Flexible and Wearable Sensors for Robotics and Health
Guest Editors: Zhiyong Fan, Johnny C. Ho, Chuan Wang, Yun-Ze Long, Huan Liu
Special Issue
Si-Based Materials and Devices
Guest Editors: Chuanbo Li, Linwei Yu, Jinsong Xia
Special Issue
Devices and Circuits for Wearable and IoT Systems
Guest Editors: Zhihua Wang, Yong Hei, Zhangming Zhu
Special Issue
Flexible and Wearable Electronics: from Materials to Applications
Guest Editors: Guozhen Shen, Yongfeng Mei, Chuan Wang, Taeyoon Lee
News
First time: Science Cites Journal of Semiconductors
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JOS has been indexed in ESCI database since 2016
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Robotic computing systems play an important role in enabling intelligent robotic tasks through intelligent algorithms and supporting hardware. In recent years, the evolution of robotic algorithms indicates a roadmap from traditional robotics to hierarchical and end-to-end models. This algorithmic advancement poses a critical challenge in achieving balanced system-wide performance. Therefore, algorithm-hardware co-design has emerged as the primary methodology, which analyzes algorithm behaviors on hardware to identify common computational properties. These properties can motivate algorithm optimization to reduce computational complexity and hardware innovation from architecture to circuit for high performance and high energy efficiency. We then reviewed recent works on robotic and embodied AI algorithms and computing hardware to demonstrate this algorithm-hardware co-design methodology. In the end, we discuss future research opportunities by answering two questions: (1) how to adapt the computing platforms to the rapid evolution of embodied AI algorithms, and (2) how to transform the potential of emerging hardware innovations into end-to-end inference improvements.
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The unique structure and exceptional properties of two-dimensional (2D) materials offer significant potential for transformative advancements in semiconductor industry. Similar to the reliance on wafer-scale single-crystal ingots for silicon-based chips, practical applications of 2D materials at the chip level needs large-scale, high-quality production of 2D single crystals. Over the past two decades, the size of 2D single-crystals has been improved to wafer or meter scale, where the nucleation control during the growth process is particularly important. Therefore, it is essential to conduct a comprehensive review of nucleation control in 2D materials to gain fundamental insights into the growth of 2D single-crystal materials. This review mainly focuses on two aspects: controlling nucleation density to enable the growth from a single nucleus, and controlling nucleation position to achieve the unidirectionally aligned islands and subsequent seamless stitching. Finally, we provide an overview and forecast of the strategic pathways for emerging 2D materials.
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Infrared and terahertz waves constitute pivotal bands within the electromagnetic spectrum, distinguished by their robust penetration capabilities and non-ionizing nature. These wavebands offer the potential for achieving high-resolution and non-destructive detection methodologies, thereby possessing considerable research significance across diverse domains including communication technologies, biomedical applications, and security screening systems. Two-dimensional materials, owing to their distinctive optoelectronic attributes, have found widespread application in photodetection endeavors. Nonetheless, their efficacy diminishes when tasked with detecting lower photon energies. Furthermore, as the landscape of device integration evolves, two-dimensional materials struggle to align with the stringent demands for device superior performance. Topological materials, with their topologically protected electronic states and non-trivial topological invariants, exhibit quantum anomalous Hall effects and ultra-high carrier mobility, providing a new approach for seeking photosensitive materials for infrared and terahertz photodetectors. This article introduces various types of topological materials and their properties, followed by an explanation of the detection mechanism and performance parameters of photodetectors. Finally, it summarizes the current research status of near-infrared to far-infrared photodetectors and terahertz photodetectors based on topological materials, discussing the challenges faced and future prospects in their development.
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Graphene has garnered significant attention in photodetection due to its exceptional optical, electrical, mechanical, and thermal properties. However, the practical application of two-dimensional (2D) graphene in optoelectronic fields is limited by its weak light absorption (only 2.3%) and zero bandgap characteristics. Increasing light absorption is a critical scientific challenge for developing high-performance graphene-based photodetectors. Three-dimensional (3D) graphene comprises vertically grown stacked 2D-graphene layers and features a distinctive porous structure. Unlike 2D-graphene, 3D-graphene offers a larger specific surface area, improved electrochemical activity, and high chemical stability, making it a promising material for optoelectronic detection. Importantly, 3D-graphene has an optical microcavity structure that enhances light absorption through interaction with incoming light. This paper systematically reviews and analyzes the current research status and challenges of 3D-graphene-based photodetectors, aiming to explore feasible development paths for these devices and promote their industrial application.
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