With the rapid technological innovation in materials engineering and device integration, a wide variety of textile-based wearable biosensors have emerged as promising platforms for personalized healthcare, exercise monitoring, and pre-diagnostics. This paper reviews the recent progress in sweat biosensors and sensing systems integrated into textiles for wearable body status monitoring. The mechanisms of biosensors that are commonly adopted for biomarkers analysis are first introduced. The classification, fabrication methods, and applications of textile conductors in different configurations and dimensions are then summarized. Afterward, innovative strategies to achieve efficient sweat collection with textile-based sensing patches are presented, followed by an in-depth discussion on nanoengineering and system integration approaches for the enhancement of sensing performance. Finally, the challenges of textile-based sweat sensing devices associated with the device reusability, washability, stability, and fabrication reproducibility are discussed from the perspective of their practical applications in wearable healthcare.

Currently, the global 5G network, cloud computing, and data center industries are experiencing rapid development. The continuous growth of data center traffic has driven the vigorous progress in high-speed optical transceivers for optical interconnection within data centers. The electro-absorption modulated laser (EML), which is widely used in optical fiber communications, data centers, and high-speed data transmission systems, represents a high-performance photoelectric conversion device. Compared to traditional directly modulated lasers (DMLs), EMLs demonstrate lower frequency chirp and higher modulation bandwidth, enabling support for higher data rates and longer transmission distances. This article introduces the composition, working principles, manufacturing processes, and applications of EMLs. It reviews the progress on advanced indium phosphide (InP)-based EML devices from research institutions worldwide, while summarizing and comparing data transmission rates and key technical approaches across various studies.

Bioresorbable electronics is a new type of electronics technology that can potentially lead to biodegradable and dissolvable electronic devices to replace current built-to-last circuits predominantly used in implantable devices and consumer electronics. Such devices dissolve in an aqueous environment in time periods from seconds to months, and generate biological safe products. This paper reviews materials, fabrication techniques, and applications of bioresorbable electronics, and aims to inspire more revolutionary bioresorbable systems that can generate broader social and economic impact. Existing challenges and potential solutions in developing bioresorbable electronics have also been presented to arouse more joint research efforts in this field to build systematic technology framework.

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.

The physical properties and photoelectrochemical characterization of aluminium doped hematite α-Fe₂O₃, synthesized by spray pyrolysis, have been investigated in regard to solar energy conversion. Stable Al-doped iron (III) oxide thin films synthesized by a spray pyrolysis technique reveals an oxygen deficiency, and the oxide exhibits n-type conductivity confirmed by anodic photocurrent generation. The preparative parameters have been optimized to obtain good quality thin films which are uniform and well adherent to the substrate. The deposited iron oxide thin films show the single hematite phase with polycrystalline rhombohedral crystal structure with crystallite size 20–40 nm. Optical analysis enabled to point out the increase in direct band-gap energy from 2.2 to 2.25 eV with doping concentration which is attributed to a blue shift. The dielectric constant and dielectric loss are studied as a function of frequency. To understand the conduction mechanism in the films, AC conductivity is measured. The conduction occurs by small polaron hopping through mixed valences Fe^2+/3+ with an electron mobility 300 K of 1.08 cm²/(V.s). The α-Fe₂O₃ exhibits long term chemical stability in neutral solution and has been characterized photoelectrochemically to assess its activity as a photoanode for various electrolytes using white light to obtain I–V characteristics. The Al-doped hematite exhibited a higher photocurrent response when compared with undoped films achieving a power conversion efficiency of 2.37% at 10 at% Al:Fe₂O₃ thin films along with fill factor 0.38 in NaOH electrolyte. The flat band potential V_fb(-0.87 V_SCE) is determined by extrapolating the linear part to C^-2 = 0 and the slope of the Mott-Schottky plot.

The mechanism of the femtosecond laser ablation of semiconductors is investigated. The collision process of free electrons in a conduction band is depicted by the test particle method, and a theoretical model of nonequilibrium electron transport on the femtosecond timescale is proposed based on the Fokker-Planck equation. This model considers the impact of inverse bremsstrahlung on the laser absorption coefficient, and gives the expressions of electron drift and diffusion coefficients in the presence of screened Coulomb potential. Numerical simulations are conducted to obtain the nonequilibrium distribution function of the electrons. The femtosecond laser ablation thresholds are then calculated accordingly, and the results are in good agreement with the experimental results. This is followed by a discussion on the impact of laser parameters on the ablation of semiconductors.

The optical properties of polypyrrole (Ppy) thin films upon 2 MeV electron beam irradiation changes with different doses. The induced changes in the optical properties for Ppy thin films were studied in the visible range 300 to 800 nm at room temperature. The optical band gap of the pristine Ppy was found to be 2.19 eV and it decreases up to 1.97 eV for a 50 kGy dose of 2 MeV electron beam. The refractive index dispersion of the samples obeys the single oscillator model. The obtained results suggest that electron beam irradiation changes the optical parameters of Ppy thin films.

We reported the influence of interface trap density (N_t) on the electrical properties of amorphous InSnZnO based thin-film transistors, which were fabricated at different direct-current (DC) magnetron sputtering powers. The device with the smallest N_t of 5.68 × 10¹¹ cm^-2 and low resistivity of 1.21 × 10^-3 Ω · cm exhibited a turn-on voltage (V_ON) of -3.60 V, a sub-threshold swing (S.S) of 0.16 V/dec and an on-off ratio (I_ON/I_OFF) of ～ 8 × 10⁸. With increasing N_t, the V_ON, S.S and I_ON/I_OFF were suppressed to —9.40 V, 0.24 V/dec and 2.59 × 10⁸, respectively. The V_TH shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices. The result showed that the reduction in N_t contributes to an improvement in the electrical properties and stability.

In a recent article, Chen et al. [Electrochimica Acta, 2014, 130: 279] presented their fabrication and characterization results on a graphene/n-Si solar cell where the Au nanoparticles were inserted in graphene to increase its optical and electrical properties. The higher efficiency of the device was attributed to increased conductivity of graphene after doping with Au nanoparticles. However, the knowledge in the field of Schottky diode solar cells relates this to increased band bending at the junction. Also, to explain the instability behaviour, they concluded that the growth of silicon oxide on the Si surface or oxygen adsorption on the window layer resulted in the device performance increasing initially and decreasing in the end. However, this instability seems to be due to variation in series resistance reduced at the beginning because of slightly lowered Fermi level and increased at the end by the self-compensation by deep in-diffusion of Au nanoparticles into n-Si layer. We also propose that inserting a very thin p-type layer at the junction will enhance the carrier collection and performance of this device.

The thermal sensitivity of phase-change memory (PCM) poses a stringent thermal budget for back-end encapsulation, demanding high-performance diffusion barriers processable at low temperatures. Conventional low-temperature silicon nitride (SiN_x) films, however, are typically porous and prone to oxidation due to abundant metastable Si–H/N–H bonds. Herein, we propose an in-situ plasma cycling strategy that reconstructs the bonding network of plasma-enhanced chemical vapor deposition (PECVD) SiN_x at a record-low temperature of 200 °C. Through controlled Ar/N₂ plasma exposure, we cleave metastable bonds and reorganize into a continuous Si–N network, achieving a near-theoretical density of 3.4 g/cm³ (a 61.9% increase) and a 143.8% enhancement in Si–N bonding proportion. The resulting 40-nm barrier effectively suppresses Te/O interdiffusion, reduces wet-etch rate by ~67%, and maintains thermal confinement within 1.6% deviation. Integrated into PCM devices, this barrier yields a 98.7% SET/RESET operation yield and a 1.4-fold wider resistance window. This work not only provides a reliable encapsulation solution for PCM but also establishes a generalizable plasma-mediated interfacial engineering approach for advanced electronic devices under thermal constraints.