Halide perovskites have emerged as the next generation of optoelectronic materials and their remarkable performances have been attractive in the fields of solar cells, light-emitting diodes, photodetectors, etc. In addition, halide perovskites have been reported as an attractive new class of X-ray direct detecting materials recently, owning to the strong X-ray stopping capacity, excellent carrier transport, high sensitivity, and cost-effective manufacturing. Meanwhile, perovskite based direct X-ray imagers have been successfully demonstrated as well. In this review article, we firstly introduced some fundamental principles of direct X-ray detection and imaging, and summarized the advances of perovskite materials for these purposes and finally put forward some needful and feasible directions.

Global data traffic is growing rapidly, and the demand for optoelectronic transceivers applied in data centers (DCs) is also increasing correspondingly. In this review, we first briefly introduce the development of optoelectronics transceivers in DCs, as well as the advantages of silicon photonic chips fabricated by complementary metal oxide semiconductor process. We also summarize the research on the main components in silicon photonic transceivers. In particular, quantum dot lasers have shown great potential as light sources for silicon photonic integration—whether to adopt bonding method or monolithic integration—thanks to their unique advantages over the conventional quantum-well counterparts. Some of the solutions for high-speed optical interconnection in DCs are then discussed. Among them, wavelength division multiplexing and four-level pulse-amplitude modulation have been widely studied and applied. At present, the application of coherent optical communication technology has moved from the backbone network, to the metro network, and then to DCs.

Fibers are low-cost substrates that are abundantly used in our daily lives. This review highlights recent advances in the fabrication and application of multifunctional fibers to achieve fibers with unique functions for specific applications ranging from textile electronics to biomedical applications. By incorporating various nanomaterials such as carbon nanomaterials, metallic nanomaterials, and hydrogel-based biomaterials, the functions of fibers can be precisely engineered. This review also highlights the performance of the functional fibers and electronic materials incorporated with textiles and demonstrates their practical application in pressure/tensile sensors, chemical/biosensors, and drug delivery. Textile technologies in which fibers containing biological factors and cells are formed and assembled into constructions with biomimetic properties have attracted substantial attention in the field of tissue engineering. We also discuss the current limitations of functional textile-based devices and their prospects for use in various future applications.

Graphene with an exceptional combination of electronic, optical and outstanding mechanical features has been proved to lead a completely different kind of 2-D electronics. The most exciting feature of graphene is its ultra-thin thickness, that can be conformally contacted to any kind of rough surface without losing much of its transparency and conductivity. Graphene has been explored demonstrating various prototype flexible electronic applications, however, its potentiality has been proven wherever transparent conductive electrodes (TCEs) are needed in a flexible, stretchable format. Graphene-based TCEs in flexible electronic applications showed greatly superior performance over their conventionally available competitor indium tin oxide (ITO). Moreover, enormous applications have been emerging, especially in wearable devices that can be potentially used in our daily life as well as in biomedical areas. However, the production of high-quality, defect-free large area graphene is still a challenge and the main hurdle in the commercialization of flexible and wearable products. The objective of the present review paper is to summarize the progress made so far in graphene-based flexible and wearable applications. The current developments including challenges and future perspectives are also highlighted.

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO₂) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n⁺-polySi) gate. The analysis utilizes the measured gate current density J_G at high oxide fields E_ox in 5.4 to 12 nm thick SiO₂ films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler–Nordheim (FN) tunneling of electrons from the accumulated n ⁺-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO₂ conduction band (CB). It was observed that PF emission current I_PF dominates FN electron tunneling current I_FN at oxide electric fields E_ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO₂ films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide–semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

The rapid development of bulk β-Ga₂O₃ crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap (~ 4.9 eV) and large breakdown electric field of about 8 MV/cm. Low cost and high quality of large β-Ga₂O₃ single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga₂O₃ crystals in bulk form. We then describe the various methods for producing bulk β-Ga₂O₃ crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.

Artificial intelligence (AI) processes data-centric applications with minimal effort. However, it poses new challenges to system design in terms of computational speed and energy efficiency. The traditional von Neumann architecture cannot meet the requirements of heavily data-centric applications due to the separation of computation and storage. The emergence of computing in-memory (CIM) is significant in circumventing the von Neumann bottleneck. A commercialized memory architecture, static random-access memory (SRAM), is fast and robust, consumes less power, and is compatible with state-of-the-art technology. This study investigates the research progress of SRAM-based CIM technology in three levels: circuit, function, and application. It also outlines the problems, challenges, and prospects of SRAM-based CIM macros.

A brief review of Huang–Rhys theory and Albrechtos theory is provided, and their connection and applications are discussed. The former is a first order perturbative theory on optical transitions intended for applications such as absorption and emission involving localized defect or impurity centers, emphasizing lattice relaxation or mixing of vibrational states due to electron–phonon coupling. The coupling strength is described by the Huang–Rhys factor. The latter theory is a second order perturbative theory on optical transitions intended for Raman scattering, and can in-principle include electron–phonon coupling in both electronic states and vibrational states. These two theories can potentially be connected through the common effect of lattice relaxation – non-orthonormal vibrational states associated with different electronic states. Because of this perceived connection, the latter theory is often used to explain resonant Raman scattering of LO phonons in bulk semiconductors and further used to describe the size dependence of electron–phonon coupling or Huang–Rhys factor in semiconductor nanostructures. Specifically, the A term in Albrechtos theory is often invoked to describe the multi-LO-phonon resonant Raman peaks in both bulk and nanostructured semiconductors in the literature, due to the misconception that a free-exciton could have a strong lattice relaxation. Without lattice relaxation, the A term will give rise to Rayleigh or elastic scattering. Lattice relaxation is only significant for highly localized defect or impurity states, and should be practically zero for either single particle states or free exciton states in a bulk semiconductor or for confined states in a semiconductor nanostructure that is not extremely small.