Currently, the global 5G network, cloud computing, and data center industries are experiencing rapid development. The continuous growth of data center traffic has driven the vigorous progress in high-speed optical transceivers for optical interconnection within data centers. The electro-absorption modulated laser (EML), which is widely used in optical fiber communications, data centers, and high-speed data transmission systems, represents a high-performance photoelectric conversion device. Compared to traditional directly modulated lasers (DMLs), EMLs demonstrate lower frequency chirp and higher modulation bandwidth, enabling support for higher data rates and longer transmission distances. This article introduces the composition, working principles, manufacturing processes, and applications of EMLs. It reviews the progress on advanced indium phosphide (InP)-based EML devices from research institutions worldwide, while summarizing and comparing data transmission rates and key technical approaches across various studies.

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.

Artificial intelligence (AI) processes data-centric applications with minimal effort. However, it poses new challenges to system design in terms of computational speed and energy efficiency. The traditional von Neumann architecture cannot meet the requirements of heavily data-centric applications due to the separation of computation and storage. The emergence of computing in-memory (CIM) is significant in circumventing the von Neumann bottleneck. A commercialized memory architecture, static random-access memory (SRAM), is fast and robust, consumes less power, and is compatible with state-of-the-art technology. This study investigates the research progress of SRAM-based CIM technology in three levels: circuit, function, and application. It also outlines the problems, challenges, and prospects of SRAM-based CIM macros.

A brief introduction of semiconductor self-assembled quantum dots (QDs) applied in single-photon sources is given. Single QDs in confined quantum optical microcavity systems are reviewed along with their optical properties and coupling characteristics. Subsequently, the recent progresses in In(Ga)As QDs systems are summarized including the preparation of quantum light sources, multiple methods for embedding single QDs into different microcavities and the scalability of single-photon emitting wavelength. Particularly, several In(Ga)As QD single-photon devices are surveyed including In(Ga)As QDs coupling with nanowires, InAs QDs coupling with distributed Bragg reflection microcavity and the In(Ga)As QDs coupling with micropillar microcavities. Furthermore, applications in the field of single QDs technology are illustrated, such as the entangled photon emission by spontaneous parametric down conversion, the single-photon quantum storage, the chip preparation of single-photon sources as well as the single-photon resonance-fluorescence measurements.

Memristors are now becoming a prominent candidate to serve as the building blocks of non-von Neumann in-memory computing architectures. By mapping analog numerical matrices into memristor crossbar arrays, efficient multiply accumulate operations can be performed in a massively parallel fashion using the physics mechanisms of Ohm’s law and Kirchhoff’s law. In this brief review, we present the recent progress in two niche applications: neural network accelerators and numerical computing units, mainly focusing on the advances in hardware demonstrations. The former one is regarded as soft computing since it can tolerant some degree of the device and array imperfections. The acceleration of multiple layer perceptrons, convolutional neural networks, generative adversarial networks, and long short-term memory neural networks are described. The latter one is hard computing because the solving of numerical problems requires high-precision devices. Several breakthroughs in memristive equation solvers with improved computation accuracies are highlighted. Besides, other nonvolatile devices with the capability of analog computing are also briefly introduced. Finally, we conclude the review with discussions on the challenges and opportunities for future research toward realizing memristive analog computing machines.

The optical properties of polypyrrole (Ppy) thin films upon 2 MeV electron beam irradiation changes with different doses. The induced changes in the optical properties for Ppy thin films were studied in the visible range 300 to 800 nm at room temperature. The optical band gap of the pristine Ppy was found to be 2.19 eV and it decreases up to 1.97 eV for a 50 kGy dose of 2 MeV electron beam. The refractive index dispersion of the samples obeys the single oscillator model. The obtained results suggest that electron beam irradiation changes the optical parameters of Ppy thin films.

Chemical mechanical polishing (CMP) serves as an indispensable process for achieving global planarization in semiconductor manufacturing, especially as integrated circuit (IC) technology advances to sub-7 nm nodes, where atomic-level surface flatness becomes crucial. Silica abrasives, which account for over 90% of the abrasive market in advanced CMP processes, operate not through simple mechanical grinding but through a key "chemical-mechanical synergistic" mechanism: chemically softening the wafer surface, then mechanically removing the softened layer to expose a new surface, which is further softened and removed, repeating this cycle to produce a smooth wafer. Despite their prevalence, conventional silica abrasives still face challenges, including relatively low material removal rate (MRR), a tendency to agglomerate, leading to poor dispersion and surface defects, and limitations in achieving ultimate surface uniformity. Significant progress has been made to address these issues. Development has progressed from simple spherical particles to complex structural designs (such as mesoporous, hollow, and raspberry-shaped structures) to enhance slurry transport and mechanical action. Surface chemical modifications (e.g., using amino or polymer groups) can improve dispersion stability and reduce scratching. Furthermore, composites with other materials (e.g., ceria, polymers) and precise control of particle size distribution are key to enhancing performance. These innovative approaches have yielded significant performance gains. State-of-the-art slurries have demonstrated the ability to achieve surface roughness below 0.1 nm rms. The development of silica abrasives is increasingly focused on sustainability and smart manufacturing. A prominent direction is the design of biodegradable abrasives that disintegrate after use, thereby simplifying post-chemical mechanical polishing (CMP) cleanup and minimizing environmental impact—an approach fully aligned with green manufacturing principles. This review systematically summarizes the progress of silica abrasives for CMP over the past 60 years. This summary provides theoretical insights and forward-looking strategies to overcome the current limitations of abrasive technology. We believe this review will be helpful in advancing the field of CMP abrasives towards next-generation semiconductor manufacturing.

We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier.A rate-equation model capable of describing the all-optical sampling mechanism is presented in this paper.Based on this model,we investigate the optimized operating parameters of the proposed system by simulating the output intensity of the probe light as functions of the input polarization angle,the phase induced by the polarization controller,and the orientation of the polarization beam splitter.The simulated results show that we can obtain a good linear slope and a large linear dynamic range,which is suitable for all-optical sampling.The operating power of the pump light can be less than 1mW.The presented all-optical sampling method can potentially operate at a sampling rate up to hundreds GS/s and needs low optical power.

The radiation-sensitive field effect transistors (RADFET) radiation dosimeter is a type of radiation detector based on the total dose effects of the p-channel metal−oxide−semiconductor (PMOS) transistor. The RADFET chip was fabricated in United Microelectronics Center 8-inch process with a six-layer photomask. The chip including two identical PMOS transistors, occupies a size of 610 µm × 610 µm. Each PMOS has a W/L ratio of 300 µm/50 µm, and a 400 nm thick gate oxide, which is formed by a dry-wet-dry oxygen process. The wet oxygen-formed gate oxide with more traps can capture more holes during irradiation, thus significantly changing the PMOS threshold voltage. Pre-irradiation measurement results from ten test chips show that the initial average voltage of the PMOS is 1.961 V with a dispersion of 5.7%. The irradiation experiment is conducted in a cobalt source facility with a dose rate of 50 rad(Si)/s. During irradiation, a constant current source circuit of 10 µA was connected to monitoring the shift in threshold voltage under different total dose. When the total dose is 100 krad(Si), the shift in threshold voltage was approximately 1.37 V, which demonstrates that an excellent radiation function was achieved.