Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure

Zhang Yang; Zhang Renping; Han Weihua; Liu Jian; Yang Xiang; Wang Ying; Li Chian Chiu; Yang Fuhua

doi:10.1088/1674-4926/30/11/116001

J. Semicond. > 2009, Volume 30 > Issue 11 > 116001

SEMICONDUCTOR TECHNOLOGY

Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure

Zhang Yang, Zhang Renping, Han Weihua, Liu Jian, Yang Xiang, Wang Ying, Li Chian Chiu and Yang Fuhua

+ Author Affiliations

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy o

DOI: 10.1088/1674-4926/30/11/116001

Abstract: A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly cross-linked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate.

Key words: nanopillars, electron-beam lithography, negative PMMA, proximity effect

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Zhang Yang, Zhang Renping, Han Weihua, Liu Jian, Yang Xiang, Wang Ying, Li Chian Chiu, Yang Fuhua. Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure[J]. Journal of Semiconductors, 2009, 30(11): 116001. doi: 10.1088/1674-4926/30/11/116001

Zhang Y, Zhang R P, Han W H, Liu J, Yang X, Wang Y, Li C C, Yang F H. Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure[J]. J. Semicond., 2009, 30(11): 116001. doi: 10.1088/1674-4926/30/11/116001.

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Received: 18 August 2015 Revised: 12 June 2009 Online: Published: 01 November 2009

A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly cross-linked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate.

Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure

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