Journal of Semiconductors

Monoelemental 2D Semiconducting Materials and Their Applications

Guest Editors:

Han Zhang

Xiantao Jiang

Yeliang Wang

Krassimir Panajotov

Shengli Zhang

Preface to the Special Issue on Monoelemental 2D Semiconducting Materials and Their Applications

Han Zhang, Xiantao Jiang, Yeliang Wang, Krassimir Panajotov, Shengli Zhang

2020, 41(8): 080101, doi: 10.1088/1674-4926/41/8/080101
Photodetectors based on 2D material/Si heterostructure

Jingshu Zhou, Juehan Yang, Zhongming Wei

2020, 41(8): 080401, doi: 10.1088/1674-4926/41/8/080401
A new single-element layered two-dimensional semiconductor: black arsenic

Mianzeng Zhong, Jun He

2020, 41(8): 080402, doi: 10.1088/1674-4926/41/8/080402
Physical vapor deposited 2D bismuth for CMOS technology

Hanliu Zhao, Xinghao Sun, Zhengrui Zhu, Wen Zhong, Dongdong Song, Weibing Lu, Li Tao

2020, 41(8): 081001, doi: 10.1088/1674-4926/41/8/081001
Tellurene: An elemental 2D monolayer material beyond its bulk phases without van der Waals layered structures

Xiaolin Cai, Xiaoyu Han, Chunxiang Zhao, Chunyao Niu, Yu Jia

2020, 41(8): 081002, doi: 10.1088/1674-4926/41/8/081002
Recent progress in 2D group-V elemental monolayers: fabrications and properties

Peiwen Yuan, Teng Zhang, Jiatao Sun, Liwei Liu, Yugui Yao, Yeliang Wang

2020, 41(8): 081003, doi: 10.1088/1674-4926/41/8/081003
Controlled growth of Mo₂C pyramids on liquid Cu surface

Yixuan Fan, Le Huang, Dechao Geng, Wenping Hu

2020, 41(8): 082001, doi: 10.1088/1674-4926/41/8/082001
High-performance junction field-effect transistor based on black phosphorus/β-Ga₂O₃ heterostructure

Chang Li, Cheng Chen, Jie Chen, Tao He, Hongwei Li, Zeyuan Yang, Liu Xie, Zhongchang Wang, Kai Zhang

2020, 41(8): 082002, doi: 10.1088/1674-4926/41/8/082002
On the mystery of the absence of a spin-orbit gap in scanning tunneling microscopy spectra of germanene

Carolien Castenmiller, Harold J. W. Zandvliet

2020, 41(8): 082003, doi: 10.1088/1674-4926/41/8/082003
Photo-induced doping effect and dynamic process in monolayer MoSe₂

Qian Yang, Yongzhou Xue, Hao Chen, Xiuming Dou, Baoquan Sun

2020, 41(8): 082004, doi: 10.1088/1674-4926/41/8/082004
Strain tunable band structure of a new 2D carbon allotrope C₅₆₈

Qiang Gao, Hasan Sahin, Jun Kang

2020, 41(8): 082005, doi: 10.1088/1674-4926/41/8/082005
First-principle study of puckered arsenene MOSFET

Hengze Qu, Ziwei Lin, Ruijuan Guo, Xiyu Ming, Wenhan Zhou, Shiying Guo, Xiufeng Song, Shengli Zhang, Haibo Zeng

2020, 41(8): 082006, doi: 10.1088/1674-4926/41/8/082006

Previous: Challenges and Possibilities of Energy Storage
Next: Quantum Transport in Mesoscopic Systems

Search

All Special Issues

Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays
—Celebration of the 10th anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies at HKUST

Special Issue on Towards High Performance Ga₂O₃ Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)

Special Issue on Towards High Performance Ga₂O₃ Electronics: Epitaxial Growth and Power Devices (Ⅰ)

Novel Semiconductor-biochemical Sensors

Twisted van der Waals Heterostructures

In-Situ and in-operando Characterization of Semiconductor Materials and Devices

Flexible Energy Devices

Semiconductor Optoelectronic Integrated Circuits

Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Advanced Analog and Mixed-Mode Integrated Circuits

Challenges and Possibilities of Energy Storage

Monoelemental 2D Semiconducting Materials and Their Applications

Quantum Transport in Mesoscopic Systems

Perovskite Semiconductor Optoelectronic Materials and Devices

Flexible Materials and Structures for Bioengineering, Sensing, and Energy Applications

Reconfigurable Computing for Energy Efficient AI Microchip Technologies

Celebration of the 60^th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang

Ultra-Violet Optoelectronic Materials, Devices and Applications

Flexible and Wearable Sensors for Robotics and Health

Compound Semiconductor Materials and Devices on Si

A Celebration of the 100^th Birthday of Prof. Kun Huang

Challenges and Possibilities of Magnetic Semiconductors

Quantum Light Sources from Semiconductors

2D-materials-related physical properties and optoelectronic devices

Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Semiconductor Materials Genome Initiative: New Concepts and Discoveries

Si-Based Materials and Devices

Flexible and Wearable Electronics: from Materials to Applications

Devices and Circuits for Wearable and IoT Systems

2D Materials and Devices

Perovskite Solar Cells

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2