Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices (Ⅰ)
Guest Editors:
Genquan Han
Shibing Long
Yuhao Zhang
Yibo Wang
Zhongming Wei
-
-
-
-
Recent advances in NiO/Ga2O3 heterojunctions for power electronics
2023, 44(6): 061802, doi: 10.1088/1674-4926/44/6/061802
-
Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD
2023, 44(6): 062801, doi: 10.1088/1674-4926/44/6/062801
-
-
Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method
2023, 44(6): 062803, doi: 10.1088/1674-4926/44/6/062803
-
-
-