Journal of Semiconductors

Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Guest Editors:

Yue Hao

Huaqiang Wu

Yuchao Yang

Qi Liu

Xiao Gong

Genquan Han

Ming Li

Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li

2021, 42(1): 010101, doi: 10.1088/1674-4926/42/1/010101
Embracing the era of neuromorphic computing

Yanghao Wang, Yuchao Yang, Yue Hao, Ru Huang

2021, 42(1): 010301, doi: 10.1088/1674-4926/42/1/010301
Towards engineering in memristors for emerging memory and neuromorphic computing: A review

Andrey S. Sokolov, Haider Abbas, Yawar Abbas, Changhwan Choi

2021, 42(1): 013101, doi: 10.1088/1674-4926/42/1/013101
A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

Xin Yang, Chen Luo, Xiyue Tian, Fang Liang, Yin Xia, Xinqian Chen, Chaolun Wang, Steve Xin Liang, Xing Wu, Junhao Chu

2021, 42(1): 013102, doi: 10.1088/1674-4926/42/1/013102
Electrolyte-gated transistors for neuromorphic applications

Heyi Huang, Chen Ge, Zhuohui Liu, Hai Zhong, Erjia Guo, Meng He, Can Wang, Guozhen Yang, Kuijuan Jin

2021, 42(1): 013103, doi: 10.1088/1674-4926/42/1/013103
Multiply accumulate operations in memristor crossbar arrays for analog computing

Jia Chen, Jiancong Li, Yi Li, Xiangshui Miao

2021, 42(1): 013104, doi: 10.1088/1674-4926/42/1/013104
Neuromorphic vision sensors: Principle, progress and perspectives

Fuyou Liao, Feichi Zhou, Yang Chai

2021, 42(1): 013105, doi: 10.1088/1674-4926/42/1/013105
Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors

Chenrong Gong, Lin Chen, Weihua Liu, Guohe Zhang

2021, 42(1): 014101, doi: 10.1088/1674-4926/42/1/014101
Voltage-dependent plasticity and image Boolean operations realized in a WO_x-based memristive synapse

Jiajuan Shi, Ya Lin, Tao Zeng, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu

2021, 42(1): 014102, doi: 10.1088/1674-4926/42/1/014102
Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

Ye Tao, Xuhong Li, Zhongqiang Wang, Gang Li, Haiyang Xu, Xiaoning Zhao, Ya Lin, Yichun Liu

2021, 42(1): 014103, doi: 10.1088/1674-4926/42/1/014103

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