Journal of Semiconductors

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Volume 3, Issue 5, May 1982

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低压硅外延生长的热力学研究

徐宝琨, 赵慕愚

Chin. J. Semicond. 1982, 3(5): 343-350

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 343.

徐宝琨, 赵慕愚. 低压硅外延生长的热力学研究[J]. Chin. J. Semicond., 1982, 3(5): 343..Export: BibTex EndNote

徐宝琨, 赵慕愚. 低压硅外延生长的热力学研究[J]. Chin. J. Semicond., 1982, 3(5): 343...

低压化学汽相淀积氮化硅膜的成份和抗氧化能力的测定

曹友琦

Chin. J. Semicond. 1982, 3(5): 351-358

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 351.

曹友琦. 低压化学汽相淀积氮化硅膜的成份和抗氧化能力的测定[J]. Chin. J. Semicond., 1982, 3(5): 351..Export: BibTex EndNote

曹友琦. 低压化学汽相淀积氮化硅膜的成份和抗氧化能力的测定[J]. Chin. J. Semicond., 1982, 3(5): 351...

关于砷化镓自生长氧化膜的研究

刘弘度, 陈娓兮, 冯哲川

Chin. J. Semicond. 1982, 3(5): 359-365

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 359.

刘弘度, 陈娓兮, 冯哲川. 关于砷化镓自生长氧化膜的研究[J]. Chin. J. Semicond., 1982, 3(5): 359..Export: BibTex EndNote

刘弘度, 陈娓兮, 冯哲川. 关于砷化镓自生长氧化膜的研究[J]. Chin. J. Semicond., 1982, 3(5): 359...

(AlGa)As/GaAs DH激光器低温负阻的研究

王守武, 顾纯学, 王仲明, 庄婉如, 杨培生

Chin. J. Semicond. 1982, 3(5): 366-375

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 366.

王守武, 顾纯学, 王仲明, 庄婉如, 杨培生. (AlGa)As/GaAs DH激光器低温负阻的研究[J]. Chin. J. Semicond., 1982, 3(5): 366..Export: BibTex EndNote

王守武, 顾纯学, 王仲明, 庄婉如, 杨培生. (AlGa)As/GaAs DH激光器低温负阻的研究[J]. Chin. J. Semicond., 1982, 3(5): 366...

一种新的CMOS负阻器件

易明銧

Chin. J. Semicond. 1982, 3(5): 376-384

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 376.

易明銧. 一种新的CMOS负阻器件[J]. Chin. J. Semicond., 1982, 3(5): 376..Export: BibTex EndNote

易明銧. 一种新的CMOS负阻器件[J]. Chin. J. Semicond., 1982, 3(5): 376...

GaAs中速度过冲特性的分析

冯育坤

Chin. J. Semicond. 1982, 3(5): 385-394

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 385.

冯育坤. GaAs中速度过冲特性的分析[J]. Chin. J. Semicond., 1982, 3(5): 385..Export: BibTex EndNote

冯育坤. GaAs中速度过冲特性的分析[J]. Chin. J. Semicond., 1982, 3(5): 385...

场控P-N结击穿特性

刘玉书

Chin. J. Semicond. 1982, 3(5): 395-403

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 395.

刘玉书. 场控P-N结击穿特性[J]. Chin. J. Semicond., 1982, 3(5): 395..Export: BibTex EndNote

刘玉书. 场控P-N结击穿特性[J]. Chin. J. Semicond., 1982, 3(5): 395...

高频C-V方法测量埋沟电荷耦合器件的沟道电势

崔成烈, 傅志煌, 吴瑞华

Chin. J. Semicond. 1982, 3(5): 404-409

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 404.

崔成烈, 傅志煌, 吴瑞华. 高频C-V方法测量埋沟电荷耦合器件的沟道电势[J]. Chin. J. Semicond., 1982, 3(5): 404..Export: BibTex EndNote

崔成烈, 傅志煌, 吴瑞华. 高频C-V方法测量埋沟电荷耦合器件的沟道电势[J]. Chin. J. Semicond., 1982, 3(5): 404...

用光谱法研究砷离子注入硅的退火

林树汉, 莫党

Chin. J. Semicond. 1982, 3(5): 410-412

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 410.

林树汉, 莫党. 用光谱法研究砷离子注入硅的退火[J]. Chin. J. Semicond., 1982, 3(5): 410..Export: BibTex EndNote

林树汉, 莫党. 用光谱法研究砷离子注入硅的退火[J]. Chin. J. Semicond., 1982, 3(5): 410...

硅单晶漩涡缺陷的铜缀饰腐蚀显示

宗祥福, 陈一, 曹厚钧, 顾孝义, 郑家芝

Chin. J. Semicond. 1982, 3(5): 413-416

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(5): 413.

宗祥福, 陈一, 曹厚钧, 顾孝义, 郑家芝. 硅单晶漩涡缺陷的铜缀饰腐蚀显示[J]. Chin. J. Semicond., 1982, 3(5): 413..Export: BibTex EndNote

宗祥福, 陈一, 曹厚钧, 顾孝义, 郑家芝. 硅单晶漩涡缺陷的铜缀饰腐蚀显示[J]. Chin. J. Semicond., 1982, 3(5): 413...

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