Journal of Semiconductors

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Volume 3, Issue 6, Jun 1982

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CONTENTS

集团模型方法研究半导体的电子结构

夏建白

Chin. J. Semicond. 1982, 3(6): 417-425

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null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 417.

夏建白. 集团模型方法研究半导体的电子结构[J]. Chin. J. Semicond., 1982, 3(6): 417..Export: BibTex EndNote

夏建白. 集团模型方法研究半导体的电子结构[J]. Chin. J. Semicond., 1982, 3(6): 417...

极性晶体中表面极化子的基态能量和有效质量

顾世洧, 燕光

Chin. J. Semicond. 1982, 3(6): 426-432

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 426.

顾世洧, 燕光. 极性晶体中表面极化子的基态能量和有效质量[J]. Chin. J. Semicond., 1982, 3(6): 426..Export: BibTex EndNote

顾世洧, 燕光. 极性晶体中表面极化子的基态能量和有效质量[J]. Chin. J. Semicond., 1982, 3(6): 426...

混合半导体的能隙结构

钟学富

Chin. J. Semicond. 1982, 3(6): 433-439

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null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 433.

钟学富. 混合半导体的能隙结构[J]. Chin. J. Semicond., 1982, 3(6): 433..Export: BibTex EndNote

钟学富. 混合半导体的能隙结构[J]. Chin. J. Semicond., 1982, 3(6): 433...

硅中“氢-缺陷络合物”施主行为的研究

王正元, 林兰英

Chin. J. Semicond. 1982, 3(6): 440-449

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 440.

王正元, 林兰英. 硅中“氢-缺陷络合物”施主行为的研究[J]. Chin. J. Semicond., 1982, 3(6): 440..Export: BibTex EndNote

王正元, 林兰英. 硅中“氢-缺陷络合物”施主行为的研究[J]. Chin. J. Semicond., 1982, 3(6): 440...

热处理硅中的氧、碳沉淀

许振嘉, 蒋四南, 孙伯康, 刘江夏

Chin. J. Semicond. 1982, 3(6): 450-457

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null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 450.

许振嘉, 蒋四南, 孙伯康, 刘江夏. 热处理硅中的氧、碳沉淀[J]. Chin. J. Semicond., 1982, 3(6): 450..Export: BibTex EndNote

许振嘉, 蒋四南, 孙伯康, 刘江夏. 热处理硅中的氧、碳沉淀[J]. Chin. J. Semicond., 1982, 3(6): 450...

重掺补偿的P-GaAs的指数带尾和激光特性

杜宝勋

Chin. J. Semicond. 1982, 3(6): 458-464

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 458.

杜宝勋. 重掺补偿的P-GaAs的指数带尾和激光特性[J]. Chin. J. Semicond., 1982, 3(6): 458..Export: BibTex EndNote

杜宝勋. 重掺补偿的P-GaAs的指数带尾和激光特性[J]. Chin. J. Semicond., 1982, 3(6): 458...

GaAs-Al_xGa_(1-x)As n-N异质结的光伏特性

虞丽生, 王存达

Chin. J. Semicond. 1982, 3(6): 465-473

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 465.

虞丽生, 王存达. GaAs-Al_xGa_(1-x)As n-N异质结的光伏特性[J]. Chin. J. Semicond., 1982, 3(6): 465..Export: BibTex EndNote

虞丽生, 王存达. GaAs-Al_xGa_(1-x)As n-N异质结的光伏特性[J]. Chin. J. Semicond., 1982, 3(6): 465...

4.2K注氮Ga_(1-x)Al_xAs(x=0.2-0.8)的光致发光研究

弓继书, 徐仲英, 徐俊英, 李玉璋, 陈良惠, 石忠诚, 杜宝勋

Chin. J. Semicond. 1982, 3(6): 474-481

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 474.

弓继书, 徐仲英, 徐俊英, 李玉璋, 陈良惠, 石忠诚, 杜宝勋. 4.2K注氮Ga_(1-x)Al_xAs(x=0.2-0.8)的光致发光研究[J]. Chin. J. Semicond., 1982, 3(6): 474..Export: BibTex EndNote

弓继书, 徐仲英, 徐俊英, 李玉璋, 陈良惠, 石忠诚, 杜宝勋. 4.2K注氮Ga_(1-x)Al_xAs(x=0.2-0.8)的光致发光研究[J]. Chin. J. Semicond., 1982, 3(6): 474...

高斯掺杂分布GaAs肖特基结的雪崩击穿电压

程兆年, 袁云芳, 王渭源

Chin. J. Semicond. 1982, 3(6): 482-492

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 482.

程兆年, 袁云芳, 王渭源. 高斯掺杂分布GaAs肖特基结的雪崩击穿电压[J]. Chin. J. Semicond., 1982, 3(6): 482..Export: BibTex EndNote

程兆年, 袁云芳, 王渭源. 高斯掺杂分布GaAs肖特基结的雪崩击穿电压[J]. Chin. J. Semicond., 1982, 3(6): 482...

UHF应用的低噪声GaAs双栅场效应晶体管

王渭源, 夏冠群, 卢建国, 詹千宝, 杨新民, 王文骐

Chin. J. Semicond. 1982, 3(6): 493-498

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 493.

王渭源, 夏冠群, 卢建国, 詹千宝, 杨新民, 王文骐. UHF应用的低噪声GaAs双栅场效应晶体管[J]. Chin. J. Semicond., 1982, 3(6): 493..Export: BibTex EndNote

王渭源, 夏冠群, 卢建国, 詹千宝, 杨新民, 王文骐. UHF应用的低噪声GaAs双栅场效应晶体管[J]. Chin. J. Semicond., 1982, 3(6): 493...

用EHMO方法计算晶体电子态密度的一种改进

蒋平

Chin. J. Semicond. 1982, 3(6): 499-501

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 499.

蒋平. 用EHMO方法计算晶体电子态密度的一种改进[J]. Chin. J. Semicond., 1982, 3(6): 499..Export: BibTex EndNote

蒋平. 用EHMO方法计算晶体电子态密度的一种改进[J]. Chin. J. Semicond., 1982, 3(6): 499...

非晶态材料硅的电子态密度的理论计算

傅卓武

Chin. J. Semicond. 1982, 3(6): 502-504

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 502.

傅卓武. 非晶态材料硅的电子态密度的理论计算[J]. Chin. J. Semicond., 1982, 3(6): 502..Export: BibTex EndNote

傅卓武. 非晶态材料硅的电子态密度的理论计算[J]. Chin. J. Semicond., 1982, 3(6): 502...

高阻n型硅的电子辐照

盛篪, 陈巧珍, 孙恒慧, 张增光

Chin. J. Semicond. 1982, 3(6): 505-508

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 505.

盛篪, 陈巧珍, 孙恒慧, 张增光. 高阻n型硅的电子辐照[J]. Chin. J. Semicond., 1982, 3(6): 505..Export: BibTex EndNote

盛篪, 陈巧珍, 孙恒慧, 张增光. 高阻n型硅的电子辐照[J]. Chin. J. Semicond., 1982, 3(6): 505...

电子辐照消除CMOS电路自锁效应的探讨

黄惠玲, 许寿祥, 邱兴镛, 张秀淼, 苏九令, 包宗明

Chin. J. Semicond. 1982, 3(6): 509-511

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(6): 509.

黄惠玲, 许寿祥, 邱兴镛, 张秀淼, 苏九令, 包宗明. 电子辐照消除CMOS电路自锁效应的探讨[J]. Chin. J. Semicond., 1982, 3(6): 509..Export: BibTex EndNote

黄惠玲, 许寿祥, 邱兴镛, 张秀淼, 苏九令, 包宗明. 电子辐照消除CMOS电路自锁效应的探讨[J]. Chin. J. Semicond., 1982, 3(6): 509...

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