Journal of Semiconductors

2019年JOS入选“中国科技期刊卓越行动计划”

2020年11月JOS被EI数据库收录

Authors
About the Journal
Editorial Board

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

|

Issue Browser

Volume 4, Issue 2, Feb 1983

Table of Content

Select articles

CONTENTS

半导体中杂质的自电离态的理论

甘子钊, 韩汝琦

Chin. J. Semicond. 1983, 4(2): 105-116

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 105.

甘子钊, 韩汝琦. 半导体中杂质的自电离态的理论[J]. Chin. J. Semicond., 1983, 4(2): 105..Export: BibTex EndNote

甘子钊, 韩汝琦. 半导体中杂质的自电离态的理论[J]. Chin. J. Semicond., 1983, 4(2): 105...

石墨插层化合物能带计算的一种方法

叶令, 张开明

Chin. J. Semicond. 1983, 4(2): 117-123

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 117.

叶令, 张开明. 石墨插层化合物能带计算的一种方法[J]. Chin. J. Semicond., 1983, 4(2): 117..Export: BibTex EndNote

叶令, 张开明. 石墨插层化合物能带计算的一种方法[J]. Chin. J. Semicond., 1983, 4(2): 117...

紧束缚法计算GaAs-GaP超晶格的能带结构及电子的有关性质

刘文明, 李甲

Chin. J. Semicond. 1983, 4(2): 124-132

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 124.

刘文明, 李甲. 紧束缚法计算GaAs-GaP超晶格的能带结构及电子的有关性质[J]. Chin. J. Semicond., 1983, 4(2): 124..Export: BibTex EndNote

刘文明, 李甲. 紧束缚法计算GaAs-GaP超晶格的能带结构及电子的有关性质[J]. Chin. J. Semicond., 1983, 4(2): 124...

掺氢和掺氟无定形硅的EHMO研究

蒋平

Chin. J. Semicond. 1983, 4(2): 133-141

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 133.

蒋平. 掺氢和掺氟无定形硅的EHMO研究[J]. Chin. J. Semicond., 1983, 4(2): 133..Export: BibTex EndNote

蒋平. 掺氢和掺氟无定形硅的EHMO研究[J]. Chin. J. Semicond., 1983, 4(2): 133...

硅P-N结电场对金施主中心空穴热发射率的影响

陈开茅, 毛晋昌

Chin. J. Semicond. 1983, 4(2): 142-148

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 142.

陈开茅, 毛晋昌. 硅P-N结电场对金施主中心空穴热发射率的影响[J]. Chin. J. Semicond., 1983, 4(2): 142..Export: BibTex EndNote

陈开茅, 毛晋昌. 硅P-N结电场对金施主中心空穴热发射率的影响[J]. Chin. J. Semicond., 1983, 4(2): 142...

用硅烷和乙烯辉光放电法制备的a-Si_xC_(1-x):H薄膜及光电性能的研究

陈光华, 张仿清, 杜宁, 徐希翔, 黄士生, 刘智

Chin. J. Semicond. 1983, 4(2): 149-153

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 149.

陈光华, 张仿清, 杜宁, 徐希翔, 黄士生, 刘智. 用硅烷和乙烯辉光放电法制备的a-Si_xC_(1-x):H薄膜及光电性能的研究[J]. Chin. J. Semicond., 1983, 4(2): 149..Export: BibTex EndNote

陈光华, 张仿清, 杜宁, 徐希翔, 黄士生, 刘智. 用硅烷和乙烯辉光放电法制备的a-Si_xC_(1-x):H薄膜及光电性能的研究[J]. Chin. J. Semicond., 1983, 4(2): 149...

GaAs三元异质外延层厚度测量的X射线衍射比强度法

杨传铮

Chin. J. Semicond. 1983, 4(2): 154-160

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 154.

杨传铮. GaAs三元异质外延层厚度测量的X射线衍射比强度法[J]. Chin. J. Semicond., 1983, 4(2): 154..Export: BibTex EndNote

杨传铮. GaAs三元异质外延层厚度测量的X射线衍射比强度法[J]. Chin. J. Semicond., 1983, 4(2): 154...

半导体DH条型注入激光器中侧向载流子波导引起的本征自脉动

郭长志, 汪凯戈

Chin. J. Semicond. 1983, 4(2): 161-170

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 161.

郭长志, 汪凯戈. 半导体DH条型注入激光器中侧向载流子波导引起的本征自脉动[J]. Chin. J. Semicond., 1983, 4(2): 161..Export: BibTex EndNote

郭长志, 汪凯戈. 半导体DH条型注入激光器中侧向载流子波导引起的本征自脉动[J]. Chin. J. Semicond., 1983, 4(2): 161...

半导体多层结构的热应变弯曲和层应力

冯哲川, 刘弘度

Chin. J. Semicond. 1983, 4(2): 171-180

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 171.

冯哲川, 刘弘度. 半导体多层结构的热应变弯曲和层应力[J]. Chin. J. Semicond., 1983, 4(2): 171..Export: BibTex EndNote

冯哲川, 刘弘度. 半导体多层结构的热应变弯曲和层应力[J]. Chin. J. Semicond., 1983, 4(2): 171...

大面积砷化镓的等离子体氧化及氧化层的AES和XPS分析

张冠生, 唐厚舜, 黄杜森, 余夕同, 赵国珍, 钮成法

Chin. J. Semicond. 1983, 4(2): 181-186

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 181.

张冠生, 唐厚舜, 黄杜森, 余夕同, 赵国珍, 钮成法. 大面积砷化镓的等离子体氧化及氧化层的AES和XPS分析[J]. Chin. J. Semicond., 1983, 4(2): 181..Export: BibTex EndNote

张冠生, 唐厚舜, 黄杜森, 余夕同, 赵国珍, 钮成法. 大面积砷化镓的等离子体氧化及氧化层的AES和XPS分析[J]. Chin. J. Semicond., 1983, 4(2): 181...

GaAs_(1-x)P_x中N-等电子陷阱的研究

李涵秋, 陆奋

Chin. J. Semicond. 1983, 4(2): 187-190

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 187.

李涵秋, 陆奋. GaAs_(1-x)P_x中N-等电子陷阱的研究[J]. Chin. J. Semicond., 1983, 4(2): 187..Export: BibTex EndNote

李涵秋, 陆奋. GaAs_(1-x)P_x中N-等电子陷阱的研究[J]. Chin. J. Semicond., 1983, 4(2): 187...

金属-半导体欧姆接触的接触电阻率

陈存礼

Chin. J. Semicond. 1983, 4(2): 191-193

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 191.

陈存礼. 金属-半导体欧姆接触的接触电阻率[J]. Chin. J. Semicond., 1983, 4(2): 191..Export: BibTex EndNote

陈存礼. 金属-半导体欧姆接触的接触电阻率[J]. Chin. J. Semicond., 1983, 4(2): 191...

用光吸收法测量半绝缘GaAs中Cr浓度的定标曲线

许振嘉, 张泽华, 孙伯康

Chin. J. Semicond. 1983, 4(2): 194-196

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 194.

许振嘉, 张泽华, 孙伯康. 用光吸收法测量半绝缘GaAs中Cr浓度的定标曲线[J]. Chin. J. Semicond., 1983, 4(2): 194..Export: BibTex EndNote

许振嘉, 张泽华, 孙伯康. 用光吸收法测量半绝缘GaAs中Cr浓度的定标曲线[J]. Chin. J. Semicond., 1983, 4(2): 194...

汽相外延InP

黄善祥

Chin. J. Semicond. 1983, 4(2): 197-199

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 197.

黄善祥. 汽相外延InP[J]. Chin. J. Semicond., 1983, 4(2): 197..Export: BibTex EndNote

黄善祥. 汽相外延InP[J]. Chin. J. Semicond., 1983, 4(2): 197...

可见光-红外光GaAlAs激光器的研究

郑广富, 廖先炳, 郑显明, 胡恩智

Chin. J. Semicond. 1983, 4(2): 200-205

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 200.

郑广富, 廖先炳, 郑显明, 胡恩智. 可见光-红外光GaAlAs激光器的研究[J]. Chin. J. Semicond., 1983, 4(2): 200..Export: BibTex EndNote

郑广富, 廖先炳, 郑显明, 胡恩智. 可见光-红外光GaAlAs激光器的研究[J]. Chin. J. Semicond., 1983, 4(2): 200...

利用离子注入硅及Nd:YAG连续激光退火制备厘米波段雪崩管

朱美芳, 姚德成, 刘世祥, 石万全, 杨丽华

Chin. J. Semicond. 1983, 4(2): 206-208

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(2): 206.

朱美芳, 姚德成, 刘世祥, 石万全, 杨丽华. 利用离子注入硅及Nd:YAG连续激光退火制备厘米波段雪崩管[J]. Chin. J. Semicond., 1983, 4(2): 206..Export: BibTex EndNote

朱美芳, 姚德成, 刘世祥, 石万全, 杨丽华. 利用离子注入硅及Nd:YAG连续激光退火制备厘米波段雪崩管[J]. Chin. J. Semicond., 1983, 4(2): 206...

Search

Advanced Search >>

Issues

2025

Volume 46 lssue 5, May 2025

Volume 46 lssue 4, Apr 2025

Volume 46 lssue 3, Mar 2025

Volume 46 lssue 2, Feb 2025

Volume 46 lssue 1, Jan 2025
2024

Volume 45 lssue 12, Dec 2024

Volume 45 lssue 11, Nov 2024

Volume 45 lssue 10, Oct 2024

Volume 45 lssue 9, Sep 2024

Volume 45 lssue 8, Aug 2024

Volume 45 lssue 7, Jul 2024

Volume 45 lssue 6, Jun 2024

Volume 45 lssue 5, May 2024

Volume 45 lssue 4, Apr 2024

Volume 45 lssue 3, Mar 2024

Volume 45 lssue 2, Feb 2024

Volume 45 lssue 1, Jan 2024
2023

Volume 44 lssue 12, Dec 2023

Volume 44 lssue 11, Nov 2023

Volume 44 lssue 10, Oct 2023

Volume 44 lssue 9, Sep 2023

Volume 44 lssue 8, Aug 2023

Volume 44 lssue 7, Jul 2023

Volume 44 lssue 6, Jun 2023

Volume 44 lssue 5, May 2023

Volume 44 lssue 4, Apr 2023

Volume 44 lssue 3, Mar 2023

Volume 44 lssue 2, Feb 2023

Volume 44 lssue 1, Jan 2023
2022

Volume 43 lssue 12, Dec 2022

Volume 43 lssue 11, Nov 2022

Volume 43 lssue 10, Oct 2022

Volume 43 lssue 9, Sep 2022

Volume 43 lssue 8, Aug 2022

Volume 43 lssue 7, Jul 2022

Volume 43 lssue 6, Jun 2022

Volume 43 lssue 5, May 2022

Volume 43 lssue 4, Apr 2022

Volume 43 lssue 3, Mar 2022

Volume 43 lssue 2, Feb 2022

Volume 43 lssue 1, Jan 2022
2021

Volume 42 lssue 12, Dec 2021

Volume 42 lssue 11, Nov 2021

Volume 42 lssue 10, Oct 2021

Volume 42 lssue 9, Sep 2021

Volume 42 lssue 8, Aug 2021

Volume 42 lssue 7, Jul 2021

Volume 42 lssue 6, Jun 2021

Volume 42 lssue 5, May 2021

Volume 42 lssue 4, Apr 2021

Volume 42 lssue 3, Mar 2021

Volume 42 lssue 2, Feb 2021

Volume 42 lssue 1, Jan 2021

Authors Preparing Your Manuscript Submit Your Manuscript Peer-Review Policy Ethical Policy Copyright and Permissions Word Template EndNote for References
About the Journal About the Journal Scope Advisory Board Editorial Board Contact Information
Link JoS in IOPScience Live Report in KouShare (“半语-益言”直播讲座) ScienceDB PHYSIKE Dyna Sense(鼎信优威)
WeChat ID
Mobile Terminal

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2

Export File

Format

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Content

Citation Only

Citation and Abstract

Citation