Journal of Semiconductors

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Volume 4, Issue 4, Apr 1983

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CONTENTS

半导体表面附近施主原子电离能计算

刘振鹏

Chin. J. Semicond. 1983, 4(4): 313-320

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 313.

刘振鹏. 半导体表面附近施主原子电离能计算[J]. Chin. J. Semicond., 1983, 4(4): 313..Export: BibTex EndNote

刘振鹏. 半导体表面附近施主原子电离能计算[J]. Chin. J. Semicond., 1983, 4(4): 313...

Gunn器件中畴的静止-渡越-静止模式的实验观察和计算机模拟

王守武, 郑一阳, 郗小林, 张进昌

Chin. J. Semicond. 1983, 4(4): 321-333

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 321.

王守武, 郑一阳, 郗小林, 张进昌. Gunn器件中畴的静止-渡越-静止模式的实验观察和计算机模拟[J]. Chin. J. Semicond., 1983, 4(4): 321..Export: BibTex EndNote

王守武, 郑一阳, 郗小林, 张进昌. Gunn器件中畴的静止-渡越-静止模式的实验观察和计算机模拟[J]. Chin. J. Semicond., 1983, 4(4): 321...

掩膜层生长导致n-GaAs表面化学组分的变化对微波器件性能的影响

陈克铭, 王森, 陈维德, 方浦明

Chin. J. Semicond. 1983, 4(4): 334-339

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 334.

陈克铭, 王森, 陈维德, 方浦明. 掩膜层生长导致n-GaAs表面化学组分的变化对微波器件性能的影响[J]. Chin. J. Semicond., 1983, 4(4): 334..Export: BibTex EndNote

陈克铭, 王森, 陈维德, 方浦明. 掩膜层生长导致n-GaAs表面化学组分的变化对微波器件性能的影响[J]. Chin. J. Semicond., 1983, 4(4): 334...

JFET-双极高速宽带运算放大器的设计问题

易明銧

Chin. J. Semicond. 1983, 4(4): 340-350

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 340.

易明銧. JFET-双极高速宽带运算放大器的设计问题[J]. Chin. J. Semicond., 1983, 4(4): 340..Export: BibTex EndNote

易明銧. JFET-双极高速宽带运算放大器的设计问题[J]. Chin. J. Semicond., 1983, 4(4): 340...

10GHz CW GaAs Gunn器件振荡特性的计算机模拟

王颖娴, 李元垠, 潘国雄

Chin. J. Semicond. 1983, 4(4): 351-360

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 351.

王颖娴, 李元垠, 潘国雄. 10GHz CW GaAs Gunn器件振荡特性的计算机模拟[J]. Chin. J. Semicond., 1983, 4(4): 351..Export: BibTex EndNote

王颖娴, 李元垠, 潘国雄. 10GHz CW GaAs Gunn器件振荡特性的计算机模拟[J]. Chin. J. Semicond., 1983, 4(4): 351...

二维非等温的分布晶体管模型

高光渤, 吴武臣

Chin. J. Semicond. 1983, 4(4): 361-368

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 361.

高光渤, 吴武臣. 二维非等温的分布晶体管模型[J]. Chin. J. Semicond., 1983, 4(4): 361..Export: BibTex EndNote

高光渤, 吴武臣. 二维非等温的分布晶体管模型[J]. Chin. J. Semicond., 1983, 4(4): 361...

短沟道CaAs MESFET中的速度过冲效应

冯育坤

Chin. J. Semicond. 1983, 4(4): 369-373

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 369.

冯育坤. 短沟道CaAs MESFET中的速度过冲效应[J]. Chin. J. Semicond., 1983, 4(4): 369..Export: BibTex EndNote

冯育坤. 短沟道CaAs MESFET中的速度过冲效应[J]. Chin. J. Semicond., 1983, 4(4): 369...

硼离子注入硅的剖面分布

李国辉, 王兴民, 卢志恒, 张通和, 田淑芸

Chin. J. Semicond. 1983, 4(4): 374-382

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 374.

李国辉, 王兴民, 卢志恒, 张通和, 田淑芸. 硼离子注入硅的剖面分布[J]. Chin. J. Semicond., 1983, 4(4): 374..Export: BibTex EndNote

李国辉, 王兴民, 卢志恒, 张通和, 田淑芸. 硼离子注入硅的剖面分布[J]. Chin. J. Semicond., 1983, 4(4): 374...

用光注入电流衰减测量绝缘膜中陷阱的俘获截面

史常忻, 顾为芳

Chin. J. Semicond. 1983, 4(4): 383-388

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 383.

史常忻, 顾为芳. 用光注入电流衰减测量绝缘膜中陷阱的俘获截面[J]. Chin. J. Semicond., 1983, 4(4): 383..Export: BibTex EndNote

史常忻, 顾为芳. 用光注入电流衰减测量绝缘膜中陷阱的俘获截面[J]. Chin. J. Semicond., 1983, 4(4): 383...

高纯VPE-GaAs、LPE-GaAs的电学性质

徐寿定, 李瑞云

Chin. J. Semicond. 1983, 4(4): 389-394

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 389.

徐寿定, 李瑞云. 高纯VPE-GaAs、LPE-GaAs的电学性质[J]. Chin. J. Semicond., 1983, 4(4): 389..Export: BibTex EndNote

徐寿定, 李瑞云. 高纯VPE-GaAs、LPE-GaAs的电学性质[J]. Chin. J. Semicond., 1983, 4(4): 389...

LPE-GaAs表面形成弯月线原因的探讨

周伯骏, 吴让元

Chin. J. Semicond. 1983, 4(4): 395-398

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 395.

周伯骏, 吴让元. LPE-GaAs表面形成弯月线原因的探讨[J]. Chin. J. Semicond., 1983, 4(4): 395..Export: BibTex EndNote

周伯骏, 吴让元. LPE-GaAs表面形成弯月线原因的探讨[J]. Chin. J. Semicond., 1983, 4(4): 395...

铝-硅和金-硅的接触电势差

陆德仁

Chin. J. Semicond. 1983, 4(4): 399-402

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 399.

陆德仁. 铝-硅和金-硅的接触电势差[J]. Chin. J. Semicond., 1983, 4(4): 399..Export: BibTex EndNote

陆德仁. 铝-硅和金-硅的接触电势差[J]. Chin. J. Semicond., 1983, 4(4): 399...

Si(100)清洁表面吸附氢的功函数变化

陈炳来, 庄承群, 王迅

Chin. J. Semicond. 1983, 4(4): 403-406

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 403.

陈炳来, 庄承群, 王迅. Si(100)清洁表面吸附氢的功函数变化[J]. Chin. J. Semicond., 1983, 4(4): 403..Export: BibTex EndNote

陈炳来, 庄承群, 王迅. Si(100)清洁表面吸附氢的功函数变化[J]. Chin. J. Semicond., 1983, 4(4): 403...

InSb液相外延层内的两类层错

俞振中, 马可军, 金刚

Chin. J. Semicond. 1983, 4(4): 407-409

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 407.

俞振中, 马可军, 金刚. InSb液相外延层内的两类层错[J]. Chin. J. Semicond., 1983, 4(4): 407..Export: BibTex EndNote

俞振中, 马可军, 金刚. InSb液相外延层内的两类层错[J]. Chin. J. Semicond., 1983, 4(4): 407...

GD a-Si:(Cl,H)薄膜的光学性质

廖显伯, 杨喜荣, 徐学敏, 刘昌灵, 孔光临

Chin. J. Semicond. 1983, 4(4): 410-414

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(4): 410.

廖显伯, 杨喜荣, 徐学敏, 刘昌灵, 孔光临. GD a-Si:(Cl,H)薄膜的光学性质[J]. Chin. J. Semicond., 1983, 4(4): 410..Export: BibTex EndNote

廖显伯, 杨喜荣, 徐学敏, 刘昌灵, 孔光临. GD a-Si:(Cl,H)薄膜的光学性质[J]. Chin. J. Semicond., 1983, 4(4): 410...

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