Chin. J. Semicond. 1983, 4(5): 415
Chin. J. Semicond. 1983, 4(5): 422
Chin. J. Semicond. 1983, 4(5): 432
Chin. J. Semicond. 1983, 4(5): 439
Chin. J. Semicond. 1983, 4(5): 444
GaAs-Al_(0.3)Ga_(0.7)As DH共腔双区激光二极管的稳态特性
Chin. J. Semicond. 1983, 4(5): 449
Chin. J. Semicond. 1983, 4(5): 455
Chin. J. Semicond. 1983, 4(5): 464
一个估算重离子在SiO_2、Al_2O_3和Si_3N_4中的R_p和ΔR_p的经验公式
Chin. J. Semicond. 1983, 4(5): 471
Chin. J. Semicond. 1983, 4(5): 477
Chin. J. Semicond. 1983, 4(5): 484
Chin. J. Semicond. 1983, 4(5): 492
Chin. J. Semicond. 1983, 4(5): 494
Chin. J. Semicond. 1983, 4(5): 502
Chin. J. Semicond. 1983, 4(5): 507
Chin. J. Semicond. 1983, 4(5): 510