Journal of Semiconductors

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Volume 4, Issue 5, May 1983

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CONTENTS

Hg_(1-x)Cd_xTe混晶中光学声子与电子的相互作用

唐文国

Chin. J. Semicond. 1983, 4(5): 415-421

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 415.

唐文国. Hg_(1-x)Cd_xTe混晶中光学声子与电子的相互作用[J]. Chin. J. Semicond., 1983, 4(5): 415..Export: BibTex EndNote

唐文国. Hg_(1-x)Cd_xTe混晶中光学声子与电子的相互作用[J]. Chin. J. Semicond., 1983, 4(5): 415...

平面Gunn器件中静止畴的形成和转变

王守武, 郑一阳, 郗小林, 潘国雄, 张进昌

Chin. J. Semicond. 1983, 4(5): 422-431

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 422.

王守武, 郑一阳, 郗小林, 潘国雄, 张进昌. 平面Gunn器件中静止畴的形成和转变[J]. Chin. J. Semicond., 1983, 4(5): 422..Export: BibTex EndNote

王守武, 郑一阳, 郗小林, 潘国雄, 张进昌. 平面Gunn器件中静止畴的形成和转变[J]. Chin. J. Semicond., 1983, 4(5): 422...

AES深度分布测量的精确分析和电子逃逸深度的测定

邢益荣, W.Ranke

Chin. J. Semicond. 1983, 4(5): 432-438

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 432.

邢益荣, W.Ranke. AES深度分布测量的精确分析和电子逃逸深度的测定[J]. Chin. J. Semicond., 1983, 4(5): 432..Export: BibTex EndNote

邢益荣, W.Ranke. AES深度分布测量的精确分析和电子逃逸深度的测定[J]. Chin. J. Semicond., 1983, 4(5): 432...

电场对TSIC测量的影响

谭长华, 许铭真

Chin. J. Semicond. 1983, 4(5): 439-443

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 439.

谭长华, 许铭真. 电场对TSIC测量的影响[J]. Chin. J. Semicond., 1983, 4(5): 439..Export: BibTex EndNote

谭长华, 许铭真. 电场对TSIC测量的影响[J]. Chin. J. Semicond., 1983, 4(5): 439...

非饱和C-t法确定体产生寿命和表面产生速度

张秀淼, 贺国根

Chin. J. Semicond. 1983, 4(5): 444-448

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 444.

张秀淼, 贺国根. 非饱和C-t法确定体产生寿命和表面产生速度[J]. Chin. J. Semicond., 1983, 4(5): 444..Export: BibTex EndNote

张秀淼, 贺国根. 非饱和C-t法确定体产生寿命和表面产生速度[J]. Chin. J. Semicond., 1983, 4(5): 444...

GaAs-Al_(0.3)Ga_(0.7)As DH共腔双区激光二极管的稳态特性

黄熙, 王启明, 杜宝勋

Chin. J. Semicond. 1983, 4(5): 449-454

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 449.

黄熙, 王启明, 杜宝勋. GaAs-Al_(0.3)Ga_(0.7)As DH共腔双区激光二极管的稳态特性[J]. Chin. J. Semicond., 1983, 4(5): 449..Export: BibTex EndNote

黄熙, 王启明, 杜宝勋. GaAs-Al_(0.3)Ga_(0.7)As DH共腔双区激光二极管的稳态特性[J]. Chin. J. Semicond., 1983, 4(5): 449...

硅中激光退火点缺陷的钝化/消除

卢励吾, 许振嘉, 蔡田海, 阮圣央

Chin. J. Semicond. 1983, 4(5): 455-463

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 455.

卢励吾, 许振嘉, 蔡田海, 阮圣央. 硅中激光退火点缺陷的钝化/消除[J]. Chin. J. Semicond., 1983, 4(5): 455..Export: BibTex EndNote

卢励吾, 许振嘉, 蔡田海, 阮圣央. 硅中激光退火点缺陷的钝化/消除[J]. Chin. J. Semicond., 1983, 4(5): 455...

a-Si:H中的原生对复合

孙钟林, 熊绍珍, 徐温元

Chin. J. Semicond. 1983, 4(5): 464-470

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 464.

孙钟林, 熊绍珍, 徐温元. a-Si:H中的原生对复合[J]. Chin. J. Semicond., 1983, 4(5): 464..Export: BibTex EndNote

孙钟林, 熊绍珍, 徐温元. a-Si:H中的原生对复合[J]. Chin. J. Semicond., 1983, 4(5): 464...

一个估算重离子在SiO_2、Al_2O_3和Si_3N_4中的R_p和ΔR_p的经验公式

李金华, 张永恩, 夏日源, 陈鄂生

Chin. J. Semicond. 1983, 4(5): 471-476

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 471.

李金华, 张永恩, 夏日源, 陈鄂生. 一个估算重离子在SiO_2、Al_2O_3和Si_3N_4中的R_p和ΔR_p的经验公式[J]. Chin. J. Semicond., 1983, 4(5): 471..Export: BibTex EndNote

李金华, 张永恩, 夏日源, 陈鄂生. 一个估算重离子在SiO_2、Al_2O_3和Si_3N_4中的R_p和ΔR_p的经验公式[J]. Chin. J. Semicond., 1983, 4(5): 471...

高速台型硅雪崩光电二极管的研制

代振华, 解金山, 夏应华, 王俊卿

Chin. J. Semicond. 1983, 4(5): 477-483

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 477.

代振华, 解金山, 夏应华, 王俊卿. 高速台型硅雪崩光电二极管的研制[J]. Chin. J. Semicond., 1983, 4(5): 477..Export: BibTex EndNote

代振华, 解金山, 夏应华, 王俊卿. 高速台型硅雪崩光电二极管的研制[J]. Chin. J. Semicond., 1983, 4(5): 477...

程序控制液相外延炉

邹志膺, 萨支天, 邹美琪, 张庆汉, 金奉善

Chin. J. Semicond. 1983, 4(5): 484-491

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 484.

邹志膺, 萨支天, 邹美琪, 张庆汉, 金奉善. 程序控制液相外延炉[J]. Chin. J. Semicond., 1983, 4(5): 484..Export: BibTex EndNote

邹志膺, 萨支天, 邹美琪, 张庆汉, 金奉善. 程序控制液相外延炉[J]. Chin. J. Semicond., 1983, 4(5): 484...

硅外延层错退火的研究

蔡田海

Chin. J. Semicond. 1983, 4(5): 492-493

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 492.

蔡田海. 硅外延层错退火的研究[J]. Chin. J. Semicond., 1983, 4(5): 492..Export: BibTex EndNote

蔡田海. 硅外延层错退火的研究[J]. Chin. J. Semicond., 1983, 4(5): 492...

低能氩离子激发的俄歇电子谱及其影响

梁际翔, 许振嘉, 佘觉觉

Chin. J. Semicond. 1983, 4(5): 494-501

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 494.

梁际翔, 许振嘉, 佘觉觉. 低能氩离子激发的俄歇电子谱及其影响[J]. Chin. J. Semicond., 1983, 4(5): 494..Export: BibTex EndNote

梁际翔, 许振嘉, 佘觉觉. 低能氩离子激发的俄歇电子谱及其影响[J]. Chin. J. Semicond., 1983, 4(5): 494...

Al-Si欧姆接触的连续CO_2激光辐照合金化

陈存礼, 范仁永

Chin. J. Semicond. 1983, 4(5): 502-506

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 502.

陈存礼, 范仁永. Al-Si欧姆接触的连续CO_2激光辐照合金化[J]. Chin. J. Semicond., 1983, 4(5): 502..Export: BibTex EndNote

陈存礼, 范仁永. Al-Si欧姆接触的连续CO_2激光辐照合金化[J]. Chin. J. Semicond., 1983, 4(5): 502...

剥层椭偏法对As~+注入Si热退火过程的进一步研究

陈敏麒, 张宏, 罗晋生

Chin. J. Semicond. 1983, 4(5): 507-509

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 507.

陈敏麒, 张宏, 罗晋生. 剥层椭偏法对As~+注入Si热退火过程的进一步研究[J]. Chin. J. Semicond., 1983, 4(5): 507..Export: BibTex EndNote

陈敏麒, 张宏, 罗晋生. 剥层椭偏法对As~+注入Si热退火过程的进一步研究[J]. Chin. J. Semicond., 1983, 4(5): 507...

一个关于砷化镓场效应晶体管稳态特性的新的分析模型

汪正孝

Chin. J. Semicond. 1983, 4(5): 510-514

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(5): 510.

汪正孝. 一个关于砷化镓场效应晶体管稳态特性的新的分析模型[J]. Chin. J. Semicond., 1983, 4(5): 510..Export: BibTex EndNote

汪正孝. 一个关于砷化镓场效应晶体管稳态特性的新的分析模型[J]. Chin. J. Semicond., 1983, 4(5): 510...

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