Journal of Semiconductors

2019年JOS入选“中国科技期刊卓越行动计划”

2020年11月JOS被EI数据库收录

Authors
About the Journal
Editorial Board

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

|

Issue Browser

Volume 5, Issue 4, Apr 1984

Table of Content

Select articles

CONTENTS

流体静压力下的Si中的深杂质能级

夏建白

Chin. J. Semicond. 1984, 5(4): 345-352

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 345.

夏建白. 流体静压力下的Si中的深杂质能级[J]. Chin. J. Semicond., 1984, 5(4): 345..Export: BibTex EndNote

夏建白. 流体静压力下的Si中的深杂质能级[J]. Chin. J. Semicond., 1984, 5(4): 345...

a-Si:(Cl,H)薄膜的PESIS研究

邢益荣, 钟战天, 沈光地

Chin. J. Semicond. 1984, 5(4): 353-359

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 353.

邢益荣, 钟战天, 沈光地. a-Si:(Cl,H)薄膜的PESIS研究[J]. Chin. J. Semicond., 1984, 5(4): 353..Export: BibTex EndNote

邢益荣, 钟战天, 沈光地. a-Si:(Cl,H)薄膜的PESIS研究[J]. Chin. J. Semicond., 1984, 5(4): 353...

多晶硅中碳化物及其来源的研究

万群, 李玉珍, 徐宝琨, 赵慕愚

Chin. J. Semicond. 1984, 5(4): 360-367

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 360.

万群, 李玉珍, 徐宝琨, 赵慕愚. 多晶硅中碳化物及其来源的研究[J]. Chin. J. Semicond., 1984, 5(4): 360..Export: BibTex EndNote

万群, 李玉珍, 徐宝琨, 赵慕愚. 多晶硅中碳化物及其来源的研究[J]. Chin. J. Semicond., 1984, 5(4): 360...

原生直拉无位错硅单晶中漩涡缺陷的观察

钱家骏, 褚一鸣, 范缇文, 林兰英

Chin. J. Semicond. 1984, 5(4): 368-373

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 368.

钱家骏, 褚一鸣, 范缇文, 林兰英. 原生直拉无位错硅单晶中漩涡缺陷的观察[J]. Chin. J. Semicond., 1984, 5(4): 368..Export: BibTex EndNote

钱家骏, 褚一鸣, 范缇文, 林兰英. 原生直拉无位错硅单晶中漩涡缺陷的观察[J]. Chin. J. Semicond., 1984, 5(4): 368...

二毫米雪崩二极管微波振荡器

杨玉芬, 刘衍芳

Chin. J. Semicond. 1984, 5(4): 374-379

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 374.

杨玉芬, 刘衍芳. 二毫米雪崩二极管微波振荡器[J]. Chin. J. Semicond., 1984, 5(4): 374..Export: BibTex EndNote

杨玉芬, 刘衍芳. 二毫米雪崩二极管微波振荡器[J]. Chin. J. Semicond., 1984, 5(4): 374...

GaAs体效应器件中阴极深凹槽掺杂分布引起静止畴的超宽带负阻

郑一阳, 张进昌

Chin. J. Semicond. 1984, 5(4): 380-387

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 380.

郑一阳, 张进昌. GaAs体效应器件中阴极深凹槽掺杂分布引起静止畴的超宽带负阻[J]. Chin. J. Semicond., 1984, 5(4): 380..Export: BibTex EndNote

郑一阳, 张进昌. GaAs体效应器件中阴极深凹槽掺杂分布引起静止畴的超宽带负阻[J]. Chin. J. Semicond., 1984, 5(4): 380...

MOSFET强表面场电学特性分析

刘可辛, 傅予, 李宏

Chin. J. Semicond. 1984, 5(4): 388-395

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 388.

刘可辛, 傅予, 李宏. MOSFET强表面场电学特性分析[J]. Chin. J. Semicond., 1984, 5(4): 388..Export: BibTex EndNote

刘可辛, 傅予, 李宏. MOSFET强表面场电学特性分析[J]. Chin. J. Semicond., 1984, 5(4): 388...

LSI二维布局的分析算法

周电, 唐璞山

Chin. J. Semicond. 1984, 5(4): 396-403

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 396.

周电, 唐璞山. LSI二维布局的分析算法[J]. Chin. J. Semicond., 1984, 5(4): 396..Export: BibTex EndNote

周电, 唐璞山. LSI二维布局的分析算法[J]. Chin. J. Semicond., 1984, 5(4): 396...

快速最优通道布线算法

吴祖增

Chin. J. Semicond. 1984, 5(4): 404-411

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 404.

吴祖增. 快速最优通道布线算法[J]. Chin. J. Semicond., 1984, 5(4): 404..Export: BibTex EndNote

吴祖增. 快速最优通道布线算法[J]. Chin. J. Semicond., 1984, 5(4): 404...

LSI多元胞版图设计的一种布局方法

沙蕗, 唐璞山

Chin. J. Semicond. 1984, 5(4): 412-421

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 412.

沙蕗, 唐璞山. LSI多元胞版图设计的一种布局方法[J]. Chin. J. Semicond., 1984, 5(4): 412..Export: BibTex EndNote

沙蕗, 唐璞山. LSI多元胞版图设计的一种布局方法[J]. Chin. J. Semicond., 1984, 5(4): 412...

双边单元的LSI自动布局算法

程可行, 庄文君

Chin. J. Semicond. 1984, 5(4): 422-430

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 422.

程可行, 庄文君. 双边单元的LSI自动布局算法[J]. Chin. J. Semicond., 1984, 5(4): 422..Export: BibTex EndNote

程可行, 庄文君. 双边单元的LSI自动布局算法[J]. Chin. J. Semicond., 1984, 5(4): 422...

可编逻辑阵列的折迭和版图自动生成

赵文庆, 唐璞山

Chin. J. Semicond. 1984, 5(4): 431-439

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 431.

赵文庆, 唐璞山. 可编逻辑阵列的折迭和版图自动生成[J]. Chin. J. Semicond., 1984, 5(4): 431..Export: BibTex EndNote

赵文庆, 唐璞山. 可编逻辑阵列的折迭和版图自动生成[J]. Chin. J. Semicond., 1984, 5(4): 431...

关于MOS结构深耗尽c(v)特性的转折现象

马鑫荣, 李志坚

Chin. J. Semicond. 1984, 5(4): 440-442

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 440.

马鑫荣, 李志坚. 关于MOS结构深耗尽c(v)特性的转折现象[J]. Chin. J. Semicond., 1984, 5(4): 440..Export: BibTex EndNote

马鑫荣, 李志坚. 关于MOS结构深耗尽c(v)特性的转折现象[J]. Chin. J. Semicond., 1984, 5(4): 440...

用MOS恒定电荷法测定半导体少子的体产生寿命及表面产生速度

谭长华, 许铭真

Chin. J. Semicond. 1984, 5(4): 443-448

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 443.

谭长华, 许铭真. 用MOS恒定电荷法测定半导体少子的体产生寿命及表面产生速度[J]. Chin. J. Semicond., 1984, 5(4): 443..Export: BibTex EndNote

谭长华, 许铭真. 用MOS恒定电荷法测定半导体少子的体产生寿命及表面产生速度[J]. Chin. J. Semicond., 1984, 5(4): 443...

Al-SiO_2-Si/n系统的r辐照界面效应及退火特性

张秀淼, 顾峰, 谢可勋

Chin. J. Semicond. 1984, 5(4): 449-452

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 449.

张秀淼, 顾峰, 谢可勋. Al-SiO_2-Si/n系统的r辐照界面效应及退火特性[J]. Chin. J. Semicond., 1984, 5(4): 449..Export: BibTex EndNote

张秀淼, 顾峰, 谢可勋. Al-SiO_2-Si/n系统的r辐照界面效应及退火特性[J]. Chin. J. Semicond., 1984, 5(4): 449...

K_(CMR)的一个测试方法

李光宇

Chin. J. Semicond. 1984, 5(4): 453-456

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1984, 5(4): 453.

李光宇. K_(CMR)的一个测试方法[J]. Chin. J. Semicond., 1984, 5(4): 453..Export: BibTex EndNote

李光宇. K_(CMR)的一个测试方法[J]. Chin. J. Semicond., 1984, 5(4): 453...

Search

Advanced Search >>

Issues

2025

Volume 46 lssue 6, Jun 2025

Volume 46 lssue 5, May 2025

Volume 46 lssue 4, Apr 2025

Volume 46 lssue 3, Mar 2025

Volume 46 lssue 2, Feb 2025

Volume 46 lssue 1, Jan 2025
2024

Volume 45 lssue 12, Dec 2024

Volume 45 lssue 11, Nov 2024

Volume 45 lssue 10, Oct 2024

Volume 45 lssue 9, Sep 2024

Volume 45 lssue 8, Aug 2024

Volume 45 lssue 7, Jul 2024

Volume 45 lssue 6, Jun 2024

Volume 45 lssue 5, May 2024

Volume 45 lssue 4, Apr 2024

Volume 45 lssue 3, Mar 2024

Volume 45 lssue 2, Feb 2024

Volume 45 lssue 1, Jan 2024
2023

Volume 44 lssue 12, Dec 2023

Volume 44 lssue 11, Nov 2023

Volume 44 lssue 10, Oct 2023

Volume 44 lssue 9, Sep 2023

Volume 44 lssue 8, Aug 2023

Volume 44 lssue 7, Jul 2023

Volume 44 lssue 6, Jun 2023

Volume 44 lssue 5, May 2023

Volume 44 lssue 4, Apr 2023

Volume 44 lssue 3, Mar 2023

Volume 44 lssue 2, Feb 2023

Volume 44 lssue 1, Jan 2023
2022

Volume 43 lssue 12, Dec 2022

Volume 43 lssue 11, Nov 2022

Volume 43 lssue 10, Oct 2022

Volume 43 lssue 9, Sep 2022

Volume 43 lssue 8, Aug 2022

Volume 43 lssue 7, Jul 2022

Volume 43 lssue 6, Jun 2022

Volume 43 lssue 5, May 2022

Volume 43 lssue 4, Apr 2022

Volume 43 lssue 3, Mar 2022

Volume 43 lssue 2, Feb 2022

Volume 43 lssue 1, Jan 2022
2021

Volume 42 lssue 12, Dec 2021

Volume 42 lssue 11, Nov 2021

Volume 42 lssue 10, Oct 2021

Volume 42 lssue 9, Sep 2021

Volume 42 lssue 8, Aug 2021

Volume 42 lssue 7, Jul 2021

Volume 42 lssue 6, Jun 2021

Volume 42 lssue 5, May 2021

Volume 42 lssue 4, Apr 2021

Volume 42 lssue 3, Mar 2021

Volume 42 lssue 2, Feb 2021

Volume 42 lssue 1, Jan 2021

Authors Preparing Your Manuscript Submit Your Manuscript Peer-Review Policy Ethical Policy Copyright and Permissions Word Template EndNote for References
About the Journal About the Journal Scope Advisory Board Editorial Board Contact Information
Link JoS in IOPScience Live Report in KouShare (“半语-益言”直播讲座) ScienceDB PHYSIKE Dyna Sense(鼎信优威)
WeChat ID
Mobile Terminal

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2

Export File

Format

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Content

Citation Only

Citation and Abstract

Citation