Chin. J. Semicond. 1985, 6(3): 225
Chin. J. Semicond. 1985, 6(3): 236
(Ga,Al)As/GaAs及GaInAsP/InP激光器中的深能级
Chin. J. Semicond. 1985, 6(3): 245
Chin. J. Semicond. 1985, 6(3): 250
Chin. J. Semicond. 1985, 6(3): 257
Chin. J. Semicond. 1985, 6(3): 268
Chin. J. Semicond. 1985, 6(3): 275
Chin. J. Semicond. 1985, 6(3): 281
Chin. J. Semicond. 1985, 6(3): 289
Chin. J. Semicond. 1985, 6(3): 298
Chin. J. Semicond. 1985, 6(3): 304
Chin. J. Semicond. 1985, 6(3): 307
Chin. J. Semicond. 1985, 6(3): 311
Chin. J. Semicond. 1985, 6(3): 317
Chin. J. Semicond. 1985, 6(3): 320
高温退火对GDa-Si_xC_(1-x):H薄膜晶化特性的影响
Chin. J. Semicond. 1985, 6(3): 323
Chin. J. Semicond. 1985, 6(3): 326
Chin. J. Semicond. 1985, 6(3): 329
Chin. J. Semicond. 1985, 6(3): 333