Journal of Semiconductors

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Volume 6, Issue 5, May 1985

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CONTENTS

硅及硅化钽超精细结构的刻蚀

李建中, I.Adesida, E.D.Wolf

Chin. J. Semicond. 1985, 6(5): 451-457

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 451.

李建中, I.Adesida, E.D.Wolf. 硅及硅化钽超精细结构的刻蚀[J]. Chin. J. Semicond., 1985, 6(5): 451..Export: BibTex EndNote

李建中, I.Adesida, E.D.Wolf. 硅及硅化钽超精细结构的刻蚀[J]. Chin. J. Semicond., 1985, 6(5): 451...

MOS界面态电荷瞬态谱方法

郑心畬, 李志坚

Chin. J. Semicond. 1985, 6(5): 458-468

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 458.

郑心畬, 李志坚. MOS界面态电荷瞬态谱方法[J]. Chin. J. Semicond., 1985, 6(5): 458..Export: BibTex EndNote

郑心畬, 李志坚. MOS界面态电荷瞬态谱方法[J]. Chin. J. Semicond., 1985, 6(5): 458...

GaAs体效应器件中阴极深凹槽掺杂分布引起的静止畴的电场的计算分析

郑一阳

Chin. J. Semicond. 1985, 6(5): 469-474

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 469.

郑一阳. GaAs体效应器件中阴极深凹槽掺杂分布引起的静止畴的电场的计算分析[J]. Chin. J. Semicond., 1985, 6(5): 469..Export: BibTex EndNote

郑一阳. GaAs体效应器件中阴极深凹槽掺杂分布引起的静止畴的电场的计算分析[J]. Chin. J. Semicond., 1985, 6(5): 469...

GaAs体效应器件中阴极深凹槽引起的静止畴的实验研究

郑一阳

Chin. J. Semicond. 1985, 6(5): 475-480

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 475.

郑一阳. GaAs体效应器件中阴极深凹槽引起的静止畴的实验研究[J]. Chin. J. Semicond., 1985, 6(5): 475..Export: BibTex EndNote

郑一阳. GaAs体效应器件中阴极深凹槽引起的静止畴的实验研究[J]. Chin. J. Semicond., 1985, 6(5): 475...

珀耳帖效应对无序绝缘衬底上多晶硅激光再结晶的影响

柳承恩

Chin. J. Semicond. 1985, 6(5): 481-486

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 481.

柳承恩. 珀耳帖效应对无序绝缘衬底上多晶硅激光再结晶的影响[J]. Chin. J. Semicond., 1985, 6(5): 481..Export: BibTex EndNote

柳承恩. 珀耳帖效应对无序绝缘衬底上多晶硅激光再结晶的影响[J]. Chin. J. Semicond., 1985, 6(5): 481...

FLOTOX型EEPROM存贮管的擦写特性与理论分析

朱钧, 靳东明, 熊大菁, 李志坚

Chin. J. Semicond. 1985, 6(5): 487-494

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 487.

朱钧, 靳东明, 熊大菁, 李志坚. FLOTOX型EEPROM存贮管的擦写特性与理论分析[J]. Chin. J. Semicond., 1985, 6(5): 487..Export: BibTex EndNote

朱钧, 靳东明, 熊大菁, 李志坚. FLOTOX型EEPROM存贮管的擦写特性与理论分析[J]. Chin. J. Semicond., 1985, 6(5): 487...

中子辐照p型硅中的空穴陷阱和与氢有关的深能级中心

杜永昌, 张玉峰, 孟祥提

Chin. J. Semicond. 1985, 6(5): 495-502

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 495.

杜永昌, 张玉峰, 孟祥提. 中子辐照p型硅中的空穴陷阱和与氢有关的深能级中心[J]. Chin. J. Semicond., 1985, 6(5): 495..Export: BibTex EndNote

杜永昌, 张玉峰, 孟祥提. 中子辐照p型硅中的空穴陷阱和与氢有关的深能级中心[J]. Chin. J. Semicond., 1985, 6(5): 495...

红外瞬态退火全离子注入MOS工艺的研究

侯东彦, 马腾阁, 陈必贤, 钱佩信

Chin. J. Semicond. 1985, 6(5): 503-510

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 503.

侯东彦, 马腾阁, 陈必贤, 钱佩信. 红外瞬态退火全离子注入MOS工艺的研究[J]. Chin. J. Semicond., 1985, 6(5): 503..Export: BibTex EndNote

侯东彦, 马腾阁, 陈必贤, 钱佩信. 红外瞬态退火全离子注入MOS工艺的研究[J]. Chin. J. Semicond., 1985, 6(5): 503...

H_2O在Si(100)-(2×1)表面上的吸附和氧化

邢益荣, W.Ranke

Chin. J. Semicond. 1985, 6(5): 511-517

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 511.

邢益荣, W.Ranke. H_2O在Si(100)-(2×1)表面上的吸附和氧化[J]. Chin. J. Semicond., 1985, 6(5): 511..Export: BibTex EndNote

邢益荣, W.Ranke. H_2O在Si(100)-(2×1)表面上的吸附和氧化[J]. Chin. J. Semicond., 1985, 6(5): 511...

无定形锗硅合金的光电特性

李长健, 徐温元

Chin. J. Semicond. 1985, 6(5): 518-522

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 518.

李长健, 徐温元. 无定形锗硅合金的光电特性[J]. Chin. J. Semicond., 1985, 6(5): 518..Export: BibTex EndNote

李长健, 徐温元. 无定形锗硅合金的光电特性[J]. Chin. J. Semicond., 1985, 6(5): 518...

Al在InP(110)面上的吸附

徐至中

Chin. J. Semicond. 1985, 6(5): 523-527

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 523.

徐至中. Al在InP(110)面上的吸附[J]. Chin. J. Semicond., 1985, 6(5): 523..Export: BibTex EndNote

徐至中. Al在InP(110)面上的吸附[J]. Chin. J. Semicond., 1985, 6(5): 523...

用喇曼光谱测注硼硅片的损伤分布

吴华生, 劳浦东, 邬建根, 屈逢源

Chin. J. Semicond. 1985, 6(5): 528-535

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 528.

吴华生, 劳浦东, 邬建根, 屈逢源. 用喇曼光谱测注硼硅片的损伤分布[J]. Chin. J. Semicond., 1985, 6(5): 528..Export: BibTex EndNote

吴华生, 劳浦东, 邬建根, 屈逢源. 用喇曼光谱测注硼硅片的损伤分布[J]. Chin. J. Semicond., 1985, 6(5): 528...

半导体四层漏光波导的分析Ⅱ:强耦合近似与精确解

张敬明

Chin. J. Semicond. 1985, 6(5): 536-544

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 536.

张敬明. 半导体四层漏光波导的分析Ⅱ:强耦合近似与精确解[J]. Chin. J. Semicond., 1985, 6(5): 536..Export: BibTex EndNote

张敬明. 半导体四层漏光波导的分析Ⅱ:强耦合近似与精确解[J]. Chin. J. Semicond., 1985, 6(5): 536...

非晶硅隙态密度的场效应测量分析方法

连建宇, 廖显伯, 郑秉茹, 孔光临

Chin. J. Semicond. 1985, 6(5): 545-551

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 545.

连建宇, 廖显伯, 郑秉茹, 孔光临. 非晶硅隙态密度的场效应测量分析方法[J]. Chin. J. Semicond., 1985, 6(5): 545..Export: BibTex EndNote

连建宇, 廖显伯, 郑秉茹, 孔光临. 非晶硅隙态密度的场效应测量分析方法[J]. Chin. J. Semicond., 1985, 6(5): 545...

分子束外延GaAs中的Sn受主态

忻尚衡, L.F.Eastman

Chin. J. Semicond. 1985, 6(5): 552-555

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 552.

忻尚衡, L.F.Eastman. 分子束外延GaAs中的Sn受主态[J]. Chin. J. Semicond., 1985, 6(5): 552..Export: BibTex EndNote

忻尚衡, L.F.Eastman. 分子束外延GaAs中的Sn受主态[J]. Chin. J. Semicond., 1985, 6(5): 552...

不同气氛中生长VPE-GaAs的深中心

王健强, 吴孝慎, 李名复, 林耀望

Chin. J. Semicond. 1985, 6(5): 556-560

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 556.

王健强, 吴孝慎, 李名复, 林耀望. 不同气氛中生长VPE-GaAs的深中心[J]. Chin. J. Semicond., 1985, 6(5): 556..Export: BibTex EndNote

王健强, 吴孝慎, 李名复, 林耀望. 不同气氛中生长VPE-GaAs的深中心[J]. Chin. J. Semicond., 1985, 6(5): 556...

离子注入抗蚀技术

韩阶平, 王培大, 马俊如, 王守武

Chin. J. Semicond. 1985, 6(5): 561-562

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(5): 561.

韩阶平, 王培大, 马俊如, 王守武. 离子注入抗蚀技术[J]. Chin. J. Semicond., 1985, 6(5): 561..Export: BibTex EndNote

韩阶平, 王培大, 马俊如, 王守武. 离子注入抗蚀技术[J]. Chin. J. Semicond., 1985, 6(5): 561...

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