Journal of Semiconductors

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Volume 7, Issue 1, Jan 1986

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CONTENTS

ZnS_xSe_(1-x)单晶的生长和束缚激子谱线的识别

黄锡珉

Chin. J. Semicond. 1986, 7(1): 1-9

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 1.

黄锡珉. ZnS_xSe_(1-x)单晶的生长和束缚激子谱线的识别[J]. Chin. J. Semicond., 1986, 7(1): 1..Export: BibTex EndNote

黄锡珉. ZnS_xSe_(1-x)单晶的生长和束缚激子谱线的识别[J]. Chin. J. Semicond., 1986, 7(1): 1...

MOSFET反型层二维电子(2DEG)带尾区域的复值电容

赵冷柱

Chin. J. Semicond. 1986, 7(1): 10-17

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 10.

赵冷柱. MOSFET反型层二维电子(2DEG)带尾区域的复值电容[J]. Chin. J. Semicond., 1986, 7(1): 10..Export: BibTex EndNote

赵冷柱. MOSFET反型层二维电子(2DEG)带尾区域的复值电容[J]. Chin. J. Semicond., 1986, 7(1): 10...

多晶硅晶粒度的X光衍射增宽傅里叶分析

林振金, 刘立竹, 龚德纯, 来永春, 王世润

Chin. J. Semicond. 1986, 7(1): 18-23

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 18.

林振金, 刘立竹, 龚德纯, 来永春, 王世润. 多晶硅晶粒度的X光衍射增宽傅里叶分析[J]. Chin. J. Semicond., 1986, 7(1): 18..Export: BibTex EndNote

林振金, 刘立竹, 龚德纯, 来永春, 王世润. 多晶硅晶粒度的X光衍射增宽傅里叶分析[J]. Chin. J. Semicond., 1986, 7(1): 18...

MOS模拟集成电路的噪声分析和低噪声设计

王国裕, 南德恒

Chin. J. Semicond. 1986, 7(1): 24-32

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 24.

王国裕, 南德恒. MOS模拟集成电路的噪声分析和低噪声设计[J]. Chin. J. Semicond., 1986, 7(1): 24..Export: BibTex EndNote

王国裕, 南德恒. MOS模拟集成电路的噪声分析和低噪声设计[J]. Chin. J. Semicond., 1986, 7(1): 24...

半导体薄片少子寿命和表面复合速度的计算方法

王宗欣, 褚幼令

Chin. J. Semicond. 1986, 7(1): 33-41

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 33.

王宗欣, 褚幼令. 半导体薄片少子寿命和表面复合速度的计算方法[J]. Chin. J. Semicond., 1986, 7(1): 33..Export: BibTex EndNote

王宗欣, 褚幼令. 半导体薄片少子寿命和表面复合速度的计算方法[J]. Chin. J. Semicond., 1986, 7(1): 33...

Ag在Si(111)面上吸附的理论研究

车静光, 张开明, 谢希德

Chin. J. Semicond. 1986, 7(1): 42-47

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 42.

车静光, 张开明, 谢希德. Ag在Si(111)面上吸附的理论研究[J]. Chin. J. Semicond., 1986, 7(1): 42..Export: BibTex EndNote

车静光, 张开明, 谢希德. Ag在Si(111)面上吸附的理论研究[J]. Chin. J. Semicond., 1986, 7(1): 42...

Ⅲ、Ⅴ族杂质对硅中热施主性质的影响

高小平, 周洁, 许振嘉

Chin. J. Semicond. 1986, 7(1): 48-58

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 48.

高小平, 周洁, 许振嘉. Ⅲ、Ⅴ族杂质对硅中热施主性质的影响[J]. Chin. J. Semicond., 1986, 7(1): 48..Export: BibTex EndNote

高小平, 周洁, 许振嘉. Ⅲ、Ⅴ族杂质对硅中热施主性质的影响[J]. Chin. J. Semicond., 1986, 7(1): 48...

GaAs中碳的红外吸收及其室温浓度测量

江德生, 宋春英, 郑捷飞, 许振嘉

Chin. J. Semicond. 1986, 7(1): 59-64

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 59.

江德生, 宋春英, 郑捷飞, 许振嘉. GaAs中碳的红外吸收及其室温浓度测量[J]. Chin. J. Semicond., 1986, 7(1): 59..Export: BibTex EndNote

江德生, 宋春英, 郑捷飞, 许振嘉. GaAs中碳的红外吸收及其室温浓度测量[J]. Chin. J. Semicond., 1986, 7(1): 59...

用低能电子衍射研究小面结构——在Ⅲ-Ⅴ族化合物半导体表面的应用

陈平, 侯晓远, 丁训民, 董国胜, 杨曙, 王迅

Chin. J. Semicond. 1986, 7(1): 65-72

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 65.

陈平, 侯晓远, 丁训民, 董国胜, 杨曙, 王迅. 用低能电子衍射研究小面结构——在Ⅲ-Ⅴ族化合物半导体表面的应用[J]. Chin. J. Semicond., 1986, 7(1): 65..Export: BibTex EndNote

陈平, 侯晓远, 丁训民, 董国胜, 杨曙, 王迅. 用低能电子衍射研究小面结构——在Ⅲ-Ⅴ族化合物半导体表面的应用[J]. Chin. J. Semicond., 1986, 7(1): 65...

用静态升华法制备CdSe单晶及其性质的观测

孔宏志, 石伟东, 王德昌

Chin. J. Semicond. 1986, 7(1): 73-77

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 73.

孔宏志, 石伟东, 王德昌. 用静态升华法制备CdSe单晶及其性质的观测[J]. Chin. J. Semicond., 1986, 7(1): 73..Export: BibTex EndNote

孔宏志, 石伟东, 王德昌. 用静态升华法制备CdSe单晶及其性质的观测[J]. Chin. J. Semicond., 1986, 7(1): 73...

中子辐照氢气区熔硅单晶退火行为的正电子湮没研究

熊兴民

Chin. J. Semicond. 1986, 7(1): 78-84

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 78.

熊兴民. 中子辐照氢气区熔硅单晶退火行为的正电子湮没研究[J]. Chin. J. Semicond., 1986, 7(1): 78..Export: BibTex EndNote

熊兴民. 中子辐照氢气区熔硅单晶退火行为的正电子湮没研究[J]. Chin. J. Semicond., 1986, 7(1): 78...

硅中铂能级的DLTS研究

游志朴, 龚敏, 陈继镛, 崔新强

Chin. J. Semicond. 1986, 7(1): 85-88

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 85.

游志朴, 龚敏, 陈继镛, 崔新强. 硅中铂能级的DLTS研究[J]. Chin. J. Semicond., 1986, 7(1): 85..Export: BibTex EndNote

游志朴, 龚敏, 陈继镛, 崔新强. 硅中铂能级的DLTS研究[J]. Chin. J. Semicond., 1986, 7(1): 85...

n型砷化镓中1.36eV发光峰的研究

张丽珠, 林昭炯, 许惠英, 秦国刚, 王永鸿

Chin. J. Semicond. 1986, 7(1): 89-94

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 89.

张丽珠, 林昭炯, 许惠英, 秦国刚, 王永鸿. n型砷化镓中1.36eV发光峰的研究[J]. Chin. J. Semicond., 1986, 7(1): 89..Export: BibTex EndNote

张丽珠, 林昭炯, 许惠英, 秦国刚, 王永鸿. n型砷化镓中1.36eV发光峰的研究[J]. Chin. J. Semicond., 1986, 7(1): 89...

紫外灵敏的表面型硅光电探测器

张苑岳

Chin. J. Semicond. 1986, 7(1): 95-98

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 95.

张苑岳. 紫外灵敏的表面型硅光电探测器[J]. Chin. J. Semicond., 1986, 7(1): 95..Export: BibTex EndNote

张苑岳. 紫外灵敏的表面型硅光电探测器[J]. Chin. J. Semicond., 1986, 7(1): 95...

液相外延空白区现象的观察

周伯骏

Chin. J. Semicond. 1986, 7(1): 99-101

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 99.

周伯骏. 液相外延空白区现象的观察[J]. Chin. J. Semicond., 1986, 7(1): 99..Export: BibTex EndNote

周伯骏. 液相外延空白区现象的观察[J]. Chin. J. Semicond., 1986, 7(1): 99...

非晶硅膜爆发结晶中的螺线形成机理

陈治明

Chin. J. Semicond. 1986, 7(1): 102-105

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 102.

陈治明. 非晶硅膜爆发结晶中的螺线形成机理[J]. Chin. J. Semicond., 1986, 7(1): 102..Export: BibTex EndNote

陈治明. 非晶硅膜爆发结晶中的螺线形成机理[J]. Chin. J. Semicond., 1986, 7(1): 102...

可望实用的Si(113)晶面

邢益荣

Chin. J. Semicond. 1986, 7(1): 106-108

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 106.

邢益荣. 可望实用的Si(113)晶面[J]. Chin. J. Semicond., 1986, 7(1): 106..Export: BibTex EndNote

邢益荣. 可望实用的Si(113)晶面[J]. Chin. J. Semicond., 1986, 7(1): 106...

中子辐照氢气生长区熔硅中一个新的三斜对称缺陷

吴恩, 吴书祥, 毛晋昌, 秦国刚

Chin. J. Semicond. 1986, 7(1): 109-112

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(1): 109.

吴恩, 吴书祥, 毛晋昌, 秦国刚. 中子辐照氢气生长区熔硅中一个新的三斜对称缺陷[J]. Chin. J. Semicond., 1986, 7(1): 109..Export: BibTex EndNote

吴恩, 吴书祥, 毛晋昌, 秦国刚. 中子辐照氢气生长区熔硅中一个新的三斜对称缺陷[J]. Chin. J. Semicond., 1986, 7(1): 109...

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