Chin. J. Semicond. 1987, 8(4): 337
Chin. J. Semicond. 1987, 8(4): 345
Chin. J. Semicond. 1987, 8(4): 351
亚稳半导体(GaAs)_(1-x)(Ge_2)_x的能带结构
Chin. J. Semicond. 1987, 8(4): 356
Chin. J. Semicond. 1987, 8(4): 362
Chin. J. Semicond. 1987, 8(4): 371
Chin. J. Semicond. 1987, 8(4): 378
Chin. J. Semicond. 1987, 8(4): 385
Chin. J. Semicond. 1987, 8(4): 391
Chin. J. Semicond. 1987, 8(4): 395
Chin. J. Semicond. 1987, 8(4): 402
流体静压力下窄禁带Hg_(1-x)Cd_xTe电学性质的研究
Chin. J. Semicond. 1987, 8(4): 410
Chin. J. Semicond. 1987, 8(4): 418
Chin. J. Semicond. 1987, 8(4): 423
Chin. J. Semicond. 1987, 8(4): 426
Chin. J. Semicond. 1987, 8(4): 429
a-Si_(1-x)C_x:H/pn~(-in)结构的蓝白色电致发光
Chin. J. Semicond. 1987, 8(4): 433
Chin. J. Semicond. 1987, 8(4): 437
Chin. J. Semicond. 1987, 8(4): 443
Chin. J. Semicond. 1987, 8(4): 445
Chin. J. Semicond. 1987, 8(4): 449