Chin. J. Semicond. 1989, 10(10): 725
Chin. J. Semicond. 1989, 10(10): 733
Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质
Chin. J. Semicond. 1989, 10(10): 739
Chin. J. Semicond. 1989, 10(10): 746
Chin. J. Semicond. 1989, 10(10): 754
Chin. J. Semicond. 1989, 10(10): 763
Chin. J. Semicond. 1989, 10(10): 769
Chin. J. Semicond. 1989, 10(10): 775
TiSi_2薄膜的形成特性及TiSi_2/多晶硅复合栅结构的研究
Chin. J. Semicond. 1989, 10(10): 781
Chin. J. Semicond. 1989, 10(10): 788
Chin. J. Semicond. 1989, 10(10): 794
Chin. J. Semicond. 1989, 10(10): 799